Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Syvorotka, I.I.; Syvorotka, I.M.; Kityk, I. V.

doi:10.1016/j.jmmm.2010.06.015

Cited by 14 publications

(7 citation statements)

References 16 publications

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“…The Ar gas flow, chamber pressure, and sputtering power are kept at 16 sccm, 10 mT, and 75 W, respectively, which is the optimal deposition environment for RT growth. It has been shown previously that these films can display different surface morphologies 26 depending on the growth conditions. Here, we used very low sputtering rate and deposited our films from a stoichiometric YIG target under ultrahigh vacuum.…”

Section: Resultsmentioning

confidence: 94%

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping

Zhang

Ding

et al. 2016

Nanoscale

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Section: Resultsmentioning

confidence: 94%

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping

Zhang

Ding

et al. 2016

Nanoscale

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“…The actual waveguiding structure is depicted in green in Fig. 1a The magnetic structure has been fabricated by means of photolithography and wet-chemical etching from a YIG (Yttrium Iron Garnet, Y 3 Fe 5 O 12 ) film with a thickness of 5.4 µm grown on a Gallium Gadolinium Garnet substrate by means of liquid phase epitaxy 29,30 . Before undergoing the patterning process, the linewidth of the ferromagnetic resonance of the film has been determined to µ 0 ∆H 0 = 0.062 mT.…”

mentioning

confidence: 99%

Experimental prototype of a spin-wave majority gate

Fischer

Kewenig

Bozhko

et al. 2017

Applied Physics Letters

212

159

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Featuring low heat dissipation, devices based on spin-wave logic gates promise to comply with increasing future requirements in information processing. In this work, we present the experimental realization of a majority gate based on the interference of spin waves in an Yttrium-Iron-Garnet-based waveguiding structure. This logic device features a three-input combiner with the logic information encoded in the phase of the spin waves. We show that the phase of the output signal represents the majority of the phase of the input signals. A switching time of about 10 ns in the prototype device provides evidence for the ability of sub-nanosecond data processing in future down-scaled devices.The scaling of conventional CMOS-based nanoelectronics is expected to become increasingly intrinsically limited in the next decade. Therefore, novel beyond-CMOS devices are being actively developed as a complement to expand functionally in future nanoelectronic technology nodes 1 . In particular, the field of magnonics 2-7 (see also reviews 8-12) which utilizes the fundamental excitations of a magnetic system -spin waves 13 and their quanta -magnons 14 as data carriers, provides promising approaches to overcome crucial limitations of CMOS since they may provide ultralow power operation as well as nonvolatility 9,12,15 . Magnonic devices are especially amenable to building majority gates 7,16-19 with excellent scaling potential leading to an improved circuit efficiency. Hence, majority gates can be considered to be key devices in a novel approach to circuit design with strongly improved area and power scaling behavior 20 .Spin waves cover characteristic frequencies in the GHz regime and their wavelength can easily be reduced down to the nanometer range 12,21 . Furthermore, their dispersion relation is highly versatile depending on material parameters as well as magnetization and field configuration 8 making them usable in a wide range of devices [2][3][4][5][6][7]10,[22][23][24][25] . In this context, majority gates are of special interest since a simple spin-wave combiner substitutes several tens of transistors, and three majority gates suffice for creating a full-adder 26 . Multi-frequency operation allows for parallel data processing 27 .In this work, we present the experimental realization and investigation of a prototype of a spin-wave majority gate, whose functionality and performance on the microscopic scale have been investigated in numerical simulations 7,17 . The investigated majority gate has three

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“…With a few years' development, YIG films thinner than 200 nm have been produced by LPE and have been used in some areas. However, LPE fabricated YIG films with thickness larger than 1 µm [23] and smaller than 100 nm have quite different magnetic properties. [2] To obtain nanoscale YIG thin films via 086701-4…”

Section: Yig Thick Films (1 µMmentioning

confidence: 99%

Liquid phase epitaxy magnetic garnet films and their applications

Rao¹,

Zhang²,

Yang³

et al. 2018

Chinese Phys. B

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Liquid phase epitaxy (LPE) is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto-optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto-optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale (about 100 nm), which was considered to be impossible for LPE method.

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Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Cited by 14 publications

References 16 publications

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping

Experimental prototype of a spin-wave majority gate

Liquid phase epitaxy magnetic garnet films and their applications

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Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Cited by 14 publications

References 16 publications

Epitaxial patterning of nanometer-thick Y3Fe5O12films with low magnetic damping

Epitaxial patterning of nanometer-thick Y3Fe5O12films with low magnetic damping

Experimental prototype of a spin-wave majority gate

Liquid phase epitaxy magnetic garnet films and their applications

Contact Info

Product

Resources

About

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping

Epitaxial patterning of nanometer-thick Y₃Fe₅O₁₂films with low magnetic damping