“…NiFe/IrMn is one of the exchange biased systems widely applied in planar Hall sensors [30,31], magnetic tunnel junction devices [32,33], microwave integrated circuits [34,35], strain sensors [36], flexible and shapeable electronics [37,38]. The interfacial spin configuration of the AF layers is very sensitive to structural defects, that facilitates bending strain tailored exchange bias [39,40], successfully implemented in wrinkled NiFe/IrMn thin films [37], grown on flexible substrates. In addition, conductivity of IrMn is ∼10 times lower than the one of NiFe, that allows wide applications of the NiFe/IrMn structures in anisotropic magnetoresistive sensors with minimized shunt currents [30,31].…”