Surface morphology, electrical and optical properties of gallium antimonide layers grown by liquid phase epitaxy

Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

“…The calculated thickness profile for InSbBi for cooling rate of 0.2 K min −1 shows good agreement with our experimental data (depicted by solid dots in figure 3) for the growth of the same material under similar growth parameters. Thus, we find similar agreement for the thickness of GaSbBi with our own experimental data as well as on published results on the thickness of LPE GaSb grown at 823 K under a cooling rate of 0.3 K min −1 [23].…”

“…These optimum parameters were used by us to grow InSbBi layers with controlled thickness and mirror-smooth surfaces [10]. Thickness of GaSbBi epitaxial layers as a function of growth time under three different cooling rates of (i) 0.2 K min −1 , (ii) 2 K min −1 and (iii) 10 K min −1 at an equilibrium temperature of 801 K. Calculated thickness for 0.2 K min −1 is compared with our experimental data (solid circles) and reported data [23] for LPE GaSb grown under similar conditions.…”

Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique

“…The growth rate was 3 mm/h in a temperature gradient of about 35°C/cm. Details on this technique can be found elsewhere [15]. The obtained ingots were 60 mm long and 12 mm in diameter.…”

“…Vertical Bridgman (VB) technique has been extensively used for growing bulk GaSb crystals [12][13][14]. Unlike Czochralski crystal, VB-grown ones do not exhibit facets and impurity striations and posses better quality being adequate for their use as substrates for epitaxial growth [15].…”

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

“…Liquid phase epitaxy (LPE) was the earliest method used in the extended growth of GaSb-based materials, and there are numerous reports on the growth of GaSb by LPE techniques. In the early studies of the surface morphology and the electrical and optical properties of GaSb layers, it was observed that the growth temperature range of 500-550 • C for the Ga melt is the optimal range to produce high-quality layers with excellent surface morphologies [14]. While epilayers grown at low temperatures have low native defect concentrations, they have poor morphologies and thus are unsuitable for device applications [15].…”