Surface morphology of Hg0.8Cd0.2Te epilayers grown by LPE using horizontal slider

Growth by a vapour–liquid–solid mechanism: a new approach for silicon carbide epitaxy

“…Large terraces are formed with a step height of several hundreds of nm. This high step bunched morphology is typical of crystal growth from the melt, similar features being found for other semiconductors grown by LPE 30,31 or for SiC grown with melts other than Al-Si. 10,32 Note the drastic improvement of the layer surface thanks to the sucking up of the liquid before cooling.…”

Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects

“…It is widely acknowledged that CZT is the optimal substrate for HgCdTe (MCT) epitaxial growth by liquid phase epitaxy (LPE) [1,2] and molecular beam epitaxy (MBE) [3,4]. Furthermore, its high average atomic number ($50) and appropriate photoelectric properties make it an ideal candidate for high-quality semiconductor nuclear radiation detection systems such as X-and gamma-ray detectors operating at room temperature [5,6].…”

The effect of incident laser energy on pulsed laser deposition of HgCdTe films

“…HgCdTe thin films have many desirable features, such as simplicity of the deposition process, low dislocation density and defects, equal composition and wide uses. The HgCdTe layers can be deposited by many different techniques, such as molecular beam epitaxy [1], metal organic vapor phase epitaxy [2], metal organic molecular beam epitaxy [3], hot wall epitaxy [4] and liquid phase epitaxy [5]. Compared with these methods, pulsed laser deposition (PLD) provides a unique method of depositing thin films because of its simplicity of use, multi-component, stoichiometric deposition and no corrosive gas.…”