Surface-Normal Ge/SiGe Asymmetric Fabry–Perot Optical Modulators Fabricated on Silicon Substrates

Audet, Ross M.; Edwards, Elizabeth H.; Balram, Krishna C.; Claussen, Stephanie; Schaevitz, Rebecca K.; Tasyurek, Emel; Rong, Yaoguang; Fei, Edward I.; Kamins, Theodore I.; Harris, James S.; Miller, David A. B.

doi:10.1109/jlt.2013.2279174

Cited by 26 publications

(32 citation statements)

References 42 publications

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“…Compared with FKE for bulk Ge, an abrupt change in the absorption coefficient takes place for QCSE around the absorption edge due to the stepwise change in the density of states for carriers, and an extinction ratio larger than FKE is observed [68]. The optical modulation based on QCSE has been reported for the operation wavelength of 1.42-1.54 µm and the operation speed as large as 20 GHz with the power consumption on the order of 0.1 pW or below [68,81,82,83,84,85]. For the integration with Si WGs, the thickness of relaxed SiGe buffer layer beneath the Ge/GeSi quantum wells should be reduced [84].…”

Section: Low-power Optical Modulatorsmentioning

confidence: 98%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Low-power Optical Modulatorsmentioning

confidence: 98%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…Hence such purely electrorefractive devices using these mechanisms have to be longer (e.g., 10's to 100's of microns instead of a few microns) and can therefore have 10 100 × −  higher operating energies than their purely electroabsorptive counterparts. The combination of electroabsorptive and electrorefractive effects can lead to an attractive low energy modulation mechanism in resonant devices, however, somewhat enhancing performance compared to purely electroabsorptive devices (see, e.g., [79]). Again, this class of bandgap resonant electrorefraction mechanisms is not practically available in silicon.…”

Section: B) Electrorefraction Mechanismsmentioning

confidence: 99%

“…These electroabsorption effects can be seen at the direct gap even in materials that are themselves indirect. A good example here is germanium, which shows all these electroabsorptive effects at its direct gap energy in appropriate structures [41], [67], [68], [69], [70], [71], [72], [73], [74], [75], [76], [77], [78], [79], [80], [81], [82], [83], [185], as in Fig. 12.…”

Section: Electroabsorption Mechanisms and Approachesmentioning

confidence: 99%

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Miller

2017

J. Lightwave Technol.

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602

406

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Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ~ 1 cm to ~ 10 m that have the same energy (~ 10fJ/bit) and simplicity as local electrical wires on chip.

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“…Having inherent compatibility with dense 2-D array integration, they have found wide range of potential applications, including high-capacity optical interconnects [1,2], freespace optical communications [3], dynamic beam forming and adaptive optics [4,5]. Surface-normal modulators based on liquid crystals and micro-electromechanical systems (MEMS) are relatively mature; but their operating speed is typically in a range from kHz up to MHz [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Surface-normal modulators based on liquid crystals and micro-electromechanical systems (MEMS) are relatively mature; but their operating speed is typically in a range from kHz up to MHz [4,5,6]. On the other hand, high-speed surface-normal intensity modulators with bandwidth beyond GHz range have been demonstrated by using multiple-quantum-well (MQW) semiconductor materials [1,2,3]. These devices, however, require complicated epitaxial structures and are inherently absorptive, which makes them unsuitable for some applications.…”

Section: Introductionmentioning

confidence: 99%

Surface-normal electro-optic-polymer modulator with silicon subwavelength grating

Kosugi

Yamada

Otomo

et al. 2016

IEICE Electron. Express

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Abstract:We propose novel silicon-based surface-normal optical modulator using electro-optic (EO) polymer. The EO polymer is embedded inside a thin silicon subwavelength grating layer, which is used as both the interdigitated electrodes for effective poling of the EO polymer, and as high-Q resonant structure for the incident light to enable efficient modulation. We numerically demonstrate 10-dB intensity modulation at 1550-nm wavelength under a refractive index change of only 3.8 × 10 −4 , corresponding to the driving voltage below 1 V. Total-reflectance phase modulator is also demonstrated by adding a backside reflector. With inherently high-speed response over several tens of GHz, scalability to dense 2-D array integrated with CMOS driver circuitry, and relatively easy and low-cost fabrication without epitaxial process, the proposed device may find versatile applications in optical interconnects, free-space optical communications, imaging and sensing.

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Surface-Normal Ge/SiGe Asymmetric Fabry–Perot Optical Modulators Fabricated on Silicon Substrates

Cited by 26 publications

References 42 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Surface-normal electro-optic-polymer modulator with silicon subwavelength grating

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