Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

Gangopadhyay, S.; Schmidt, Thomas; Kruse, C.; Figge, S.; Hommel, D.; Falta, J.

doi:10.1116/1.4886956

Cited by 14 publications

(7 citation statements)

References 49 publications

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“…Moreover, the analysis of Ga 3d and Ga 3p (not shown) doublets further corroborate the full oxidation of the film. In particular, the Ga 3d doublet shows a shift of about 1.3 eV toward higher binding energies (Figure 4c), whilst the position of the Ga 3p reported in Table 1 reveals a systematic shift to higher energies as expected in case of Ga oxidation [41][42][43][44]. The as-grown GaN membrane shares a wurtzite type P6 3 mc structure oriented along [1] zone axis, single crystal texture as indicated by electron diffraction (ED) as well as a simulated diffraction pattern (Figure 5a,b).…”

Section: Resultssupporting

confidence: 58%

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

et al. 2022

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Large-sized 2D semiconductor materials have gained significant attention for their fascinating properties in various applications. In this work, we demonstrate the fabrication of nanoperforated ultrathin β-Ga2O3 membranes of a nanoscale thickness. The technological route includes the fabrication of GaN membranes using the Surface Charge Lithography (SCL) approach and subsequent thermal treatment in air at 900 °C in order to obtain β-Ga2O3 membranes. The as-grown GaN membranes were discovered to be completely transformed into β-Ga2O3, with the morphology evolving from a smooth topography to a nanoperforated surface consisting of nanograin structures. The oxidation mechanism of the membrane was investigated under different annealing conditions followed by XPS, AFM, Raman and TEM analyses.

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Section: Resultssupporting

confidence: 58%

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

et al. 2022

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“…At the beginning, as shown in Fig. 2a , Ga 3d peak is contributed only from Ga-O bonds 19 on the GaN surface. In fact, this kind of Ga-polar GaN surface was always wetted with Ga-Ga metal layer after MOCVD growth, and then oxidized quickly into GaO x when exposed to air 20 , 21 .…”

Section: Resultsmentioning

confidence: 90%

Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Huang

Liu

et al. 2018

Sci Rep

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Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN contacts for interfacial analysis and process optimization. However, the details of ion-induced interfacial reaction, as well as the formation of sputter by-products at the interfaces are still unclear. Here by combining state-of-the-art Ar+ ion sputter with in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ high resolution transmission electron microscopy (HRTEM), we have observed clearly not only the ion-induced chemical state changes at interface, but also the by-products at the prototypical Ti/GaN system. For the first time, we identified the formation of a metallic Ga layer at the GaOx/GaN interface. At the Ti/GaOx interface, TiCx components were also detected due to the reaction between metal Ti and surface-adsorbed C species. Our study reveals that the corresponding core level binding energy and peak intensity obtained from ion sputter depth profile should be treated with much caution, since they will be changed due to ion-induced interface reactions and formation of by-products during ion bombardment.

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“…A detailed description of the instrument can be found in our previous work 28 29 , and the specifics of the experimental procedure and corresponding analysis conducted in this work are included in the Supporting Information (SI) . An undoped GaN(0001) wafer was cleaned by cycles of N 2 + bombardment, followed by annealing in N 2 (3 × 10 −7 mbar) at ~1200 K for surface structure restoration 22 23 30 31 32 33 34 . This pre-treatrement resulted in a GaN (0001)-1 × 1 reconstruction, which we imaged using low energy electron diffraction (LEED).…”

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confidence: 99%

Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions

Zhang

Ptasińska

2016

Sci Rep

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We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H2O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to H2O at room temperature. However, the GaN surface work function was slightly reduced due to the adsorption of molecular H2O and its dissociation products. At elevated temperatures, a negative charge generated on the surface by a vigorous H2O/GaN interfacial chemistry induced an increase in both the surface work function and upward band bending. We tracked the dissociative adsorption of H2O onto the GaN(0001) surface by recording the core-level photoemission spectra and obtained the electronic and chemical properties at the H2O/GaN interface under operando conditions. Our results suggest a strong correlation between the electronic and chemical properties of the material surface, and we expect that their evolutions lead to significantly different properties at the electrolyte/electrode interface in a photoelectrochemical solar cell.

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Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

Abstract: Articles you may be interested inPolarity determination of polar and semipolar ( 11 2 ¯ 2 ) InN and GaN layers by valence band photoemission spectroscopy

Cited by 14 publications

References 49 publications

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System

Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions

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