Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor

Abstract

We have investigated the effect of oxidant sources on the performance of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

“…In fact, different studies show that the thermal oxidation can be employed as a useful tool generating a nearly beneficial native Al 2 O 3 oxide layer serving as an insulating layer, reducing the gate leakage current and P330 ECS Journal of Solid State Science and Technology, 7 (6) P329-P338 (2018) improving performances. [47][48][49][50] Though, there is still a strong need to deeply investigate the influence of the thermal budget in order to orient and control the fabrication process. Indeed, a precise knowledge of the InAlN layer surface chemistry under this process of oxidation is required to ensure the final quality and high performances of the HEMT device.…”

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment

“…These trap levels are possibly attributed to the oxygen vacancies in InO x . [30,33] It is considered that the chemical composition of the surface-oxide changed after H 2 O vapor pretreatment, and the amount of InO x decreased on the surface-oxide.…”

“…[29] However, owing to its electron traps such as oxygen vacancies, deficient In 2 O 3 (InO x ) induces the current collapse in GaN HEMTs that use In-based barrier layers. [30][31][32][33] We previously proposed H 2 O vapor oxidation to decrease the amount of InO x in the surface-oxide by focusing on the thermal stability of the intermediate hydroxide and showed a decreased gate leakage current and current collapse in InAlN/GaN HEMTs using H 2 O vapor. [30,31] Alternatively, when using H 2 O vapor as an oxidant source for ALD-Al 2 O 3 (H 2 O vapor-Al 2 O 3 ), the density of the dielectric is lower than that obtained when O 2 plasma (O 2 plasma-Al 2 O 3 ) [34] DOI: 10.1002/pssa.202100638 Herein, Al 2 O 3 /InAlGaN/GaN metal-insulator-semiconductor high-electronmobility transistors (MIS-HEMTs) using H 2 O vapor pretreatment to decrease the amount of deficient indium oxide (InO x ) is successfully developed.…”

Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation

“…13) Therefore, the use of an insulator for the gate structure is necessary. So far, several insulators, i.e., Al2O3 12,[14][15][16][17][18] , ZrO2 15,19,20) , GdScO3 15) , HfO2 19) , SiO2 21) , plasma oxides [22][23][24][25][26] , and thermal oxides 27,28) , have been used to construct insulated gate HEMTs or metal-insulator-semiconductor (MIS) HEMTs. Among these insulators, SiO2 has the widest band gap, achieving a large ΔEC with InAlN lattice-matched to GaN.…”