Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

doi:10.1016/j.mseb.2009.02.009

Cited by 26 publications

(7 citation statements)

References 9 publications

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“…3 SiN x /intrinsic amorphous-silicon ͑a-Si͒ stacked layers formed at 50°C by remote PECVD ͑RPECVD͒ yield an SRV of lower than 11 cm/s. 4 In the present work, we demonstrate improved passivation quality using SiN x / a-Si stacked layers formed by catalytic chemical vapor deposition ͑Cat-CVD͒, 5 often referred to as hot-Wire CVD, which is also a method of forming passivating films at low temperatures. The advantage of Cat-CVD is the absence of damage to Si surfaces from energetic charged species.…”

Section: Extremely Low Surface Recombination Velocities On Crystallinmentioning

confidence: 81%

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Koyama

Ohdaira

Matsumura

2010

Applied Physics Letters

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Section: Extremely Low Surface Recombination Velocities On Crystallinmentioning

confidence: 81%

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Koyama

Ohdaira

Matsumura

2010

Applied Physics Letters

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“…The experimental processes by modulating the parameters of microwave power, substrate temperature and pot-deposition annealing were performed. For evaluating the passivation quality of a-Si:H films, the effective carrier lifetime measurements were performed with a quasi-steady-state photoconductance (QSSPC) measurement setup by a Sinton Consulting WCT-120 system (9). The Fourier-transform infrared spectroscopy (FTIR) determines the content of bonded H and the silicon-hydrogen bonding configurations (10).…”

Section: Methodsmentioning

confidence: 99%

Investigation of a-Si:H Films as Passivation Layer in Heterojunction Interface at Low Temperature

Chu¹,

Lee²,

Chang³

et al. 2014

ECS Trans.

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In this study, hydrogenated amorphous silicon (a-Si:H) thin films that were deposited by the high density plasma electron cyclotron resonance chemical vapor deposition (ECRCVD) were used to study the passivation effect on the surface of c-Si substrate. We investigated the structural, optical, and passivation qualities of a- Si:H as a heterojunction interface by modulating the parameters of microwave power, substrate temperature, and post-deposition annealing. With increasing the microwave power leading to more dangling bonds, such that the longer lifetime and lower microstructure factor R* were demonstrated at 500W. When raising the substrate temperature, the hydrogen content (CH) will be decreased but the lifetime will be increased because this R* is the a dominated factor. It indicates that exceeding 120ºC in the substrate temperature has better absorption to the light. In addition, the post-deposition annealing of a-Si:H was an effective method to improve the minority carrier lifetime, and we can obtain better passivation with the carrier lifetime of 883μsec after 2 minutes annealing at 270ºC.

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“…Silicon nitride (SiN x ), amorphous silicon (a-Si), Al 2 O 3 , SiO 2 , and their stacked layers are excellent passivation layers that demonstrate outstanding passivation quality. [1][2][3][4][5][6][7] The passivation of these layers relies on defect termination and=or field-effect passivation. Regarding the defect termination mechanism, the surface recombination of minority carriers is suppressed by the reduction in interface state density (D it ), whereas minority carrier recombination probability is decreased by band bending in field-effect passivation.…”

Section: Introductionmentioning

confidence: 99%

Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers

Thi

Koyama

Ohdaira

et al. 2016

Jpn. J. Appl. Phys.

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We investigate the role of hydrogen (H) in the improvement in the passivation quality of silicon nitride (SiN x ) prepared by catalytic chemical vapor deposition (Cat-CVD) and Cat-CVD SiN x /phosphorus (P) Cat-doped layers on crystalline silicon (c-Si) by annealing. Both structures show promising passivation capabilities for c-Si with extremely low surface recombination velocity (SRV) on n-type c-Si. Defect termination by H is evaluated on the basis of defect density (N d) determined by electron spin resonance (ESR) spectroscopy and interface state density (D it) calculated by the Terman method. The two parameters are found to be drastically decreased by annealing after SiN x deposition. The calculated average D it at midgap (D it-average) is 2.2 × 1011 eV−1 cm−2 for the SiN x /P Cat-doped c-Si sample with a SRV of 2 cm/s, which is equivalent to 3.1 × 1011 eV−1 cm−2 for the SiN x /c-Si sample with a SRV of 5 cm/s after annealing. The results indicate that H atoms play a critical role in the reduction in D it for SiN x /c-Si and SiN x /P Cat-doped c-Si, resulting in a drastic reduction in SRV by annealing.

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Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

Cited by 26 publications

References 9 publications

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Investigation of a-Si:H Films as Passivation Layer in Heterojunction Interface at Low Temperature

Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers

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Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

Cited by 26 publications

References 9 publications

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Investigation of a-Si:H Films as Passivation Layer in Heterojunction Interface at Low Temperature

Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiNx and SiNx/P catalytic-doped layers

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Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiN_x and SiN_x/P catalytic-doped layers