Surface passivation effect by fluorine plasma treatment on ZnO for efficiency and lifetime improvement of inverted polymer solar cells

Polydorou, Ermioni; Zeniou, Angelos; Tsikritzis, Dimitris; Soultati, Anastasia; Sakellis, Elias; Gardelis, S.; Papadopoulos, Theodoros A.; Briscoe, Joe; Palilis, Leonidas C.; Κέννου, Στέλλα; Gogolides, Εvangelos; Argitis, Panagiotis; Davazoglou, Dimitrios; Vasilopoulou, Maria

doi:10.1039/c6ta03594a

Cited by 67 publications

(71 citation statements)

References 87 publications

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“…The surface of colloidal nanocrystals like PbS nanosheets contains trap states originating from dangling bonds, due to the periodicity mismatch of the crystal facet and the surface ligands . Because of the high surface‐to‐volume ratio, these trap states can significantly hamper the electron transport . Although different organic ligands (e.g., oleic acid for our case) are used during the synthesis, they are not able to completely passivate the surface due to their molecule length, and a certain amount of dangling bonds remains unpassivated between the ligands, since they are unreachable for the long organic molecules .…”

Section: Resultsmentioning

confidence: 99%

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

Moayed

Bielewicz

Noei

et al. 2018

Adv Funct Materials

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Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach while having the advantages of two-dimensionality. In order to employ these materials, according transistor behavior should be adjustable and of high performance. It is shown that the transistor performance of colloidal lead sulfide nanosheets is tunable by altering the surface passivation, the contact metal, or by exposing them to air. It is found that adding halide ions to the synthesis leads to an improvement of the conductivity, the fieldeffect mobility, and the on/off ratio of these transistors by passivating their surface defects. Superior n-type behavior with a field-effect mobility of 248 cm 2 V −1 s −1 and an on/off ratio of 4 × 10 6 is achieved. The conductivity of these stripes can be changed from n-type to p-type by altering the contact metal and by adding oxygen to the working environment. As a possible solution for the post-Moore era, realizing new high-quality semiconductors such as colloidal materials is crucial. In this respect, the results can provide new insights which helps to accelerate their optimization for potential applications.

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Section: Resultsmentioning

confidence: 99%

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

Moayed

Bielewicz

Noei

et al. 2018

Adv Funct Materials

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“…When ZnO is deposited between glass and QDs, the PL intensity drops obviously, whereas the insertion of MgZnO helps the PL intensity increase by about 18%. According to previous reports, excitons at QDs can be quenched at the interface of ETL/QDs due to a quantity of defects on ZnO surface [16][17][18]. As a consequence, the improved fluorescence characteristic may be attributed to the modification of MgZnO which reduces interfacial defect states.…”

Section: Experimental Detailmentioning

confidence: 83%

P‐117: Inverted Quantum Dot Light‐Emitting Diodes with MgZnO Modified Electron Transport Layer

Sun

Peng

Chen

et al. 2017

Symp Digest of Tech Papers

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Inverted quantum-dot light-emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated. Consequently, maximum current efficiency of 11.5 cd/A is achieved and a 36% improvement of external quantum efficiency (EQE) is also obtained in comparison with conventional devices without MgZnO modification layer.

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“…In this study, we proceed from the fact that the fluorine atom is widely used for surface passivation [23][24][25][26][27] and that the resistivity of AZOY thin films is strongly dependent on working temperature. We therefore propose two methods to resolve the high resistivity of AZOY thin films at low working temperatures and the non-ideal AZOY/n-Si interface.…”

Section: Introductionmentioning

confidence: 99%

Surface passivation of AZOY/n-Si interface of heterojunction solar cells with NH4F solution treatment

Wang¹,

Tsai²,

Cheng³

2020

Mater. Res. Express

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This study reports the fabrication of n-type aluminum-and yttrium-codoped zinc oxide (AZOY) on n-Si (AZOY/n-Si) heterojunction solar cells (HJSCs) by using RF magnetron sputtering at various working pressure. AZOY thin films deposited on glass and n-Si substrates at various working pressure were evaluated for optoelectrical properties and performance. At a working pressure of 3 mTorr, the AZOY films showed the lowest resistivity of 8.11×10 -3 Ωcm and visible transmittance (400-800 nm) of 84.64%, and AZOY/n-Si HJSCs achieved a high conversion efficiency of 11.83% (V oc : 498 mV, J sc : 35.89 mAcm −2 , and FF: 0.662). Repeating the optimal working pressure, the n-Si substrate was immersed in ammonium fluoride (NH 4 F) solution to improve the AZOY/n-Si interface state. The fluorine atom had the strongest electron negativity for effective passivation of the silicon dangling bond, and the device's performance was able to further increase conversion efficiency to 12.64% (V oc : 523mV, J sc : 36.79 mAcm −2 , and FF: 0.657). Moreover, NH 4 F solution treatment of the silicon surface can increase the thinness of the SiO x layer from 1.27 to 0.79 nm and reduce the interface state density from 8.59×10 11 to 1.13×10 11 cm 2 .

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Surface passivation effect by fluorine plasma treatment on ZnO for efficiency and lifetime improvement of inverted polymer solar cells

Abstract: The surface passivation effect of SF6 plasma on ZnO films for application in polymer solar cells is demonstrated.

Cited by 67 publications

References 87 publications

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

P‐117: Inverted Quantum Dot Light‐Emitting Diodes with MgZnO Modified Electron Transport Layer

Surface passivation of AZOY/n-Si interface of heterojunction solar cells with NH4F solution treatment

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