2009
DOI: 10.4028/www.scientific.net/msf.615-617.837
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Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Abstract: Surface passivation of 4H-SiC has been investigated for high current-gain bipolar junction transistors (BJTs). For the characterization of surface passivation, we have introduced the product “sp•Ls” of a surface recombination velocity (sp) and a surface diffusion length (Ls). The sp•Ls value was obtained by analyzing the I-V characteristics of pn diodes. Both BJTs and pn diodes were fabricated with several passivation methods. We have found clear correlation between the sp•Ls value and the current gain of the … Show more

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“…Finally, the switching behavior and short-circuit capability of 1200 V 6 A rated SiC BJT were examined. Other important SiC BJT challenges outside the scope of this work are improved surface passivation for increased current gain [3] and long-term stability [4].…”
Section: Introductionmentioning
confidence: 99%
“…Finally, the switching behavior and short-circuit capability of 1200 V 6 A rated SiC BJT were examined. Other important SiC BJT challenges outside the scope of this work are improved surface passivation for increased current gain [3] and long-term stability [4].…”
Section: Introductionmentioning
confidence: 99%