Surface Plasmon Devices for Nanoscale Integration with Electronic Device on Silicon - Optical Signal Transmission and Detection through Surface Plasmon on Nanoscale Circuit

Abstract

This paper discusses the architecture of surface plasmon devices for silicon-based nanoscale-integrated circuits. A suitable structure for surface plasmon devices integrated monolithically with electronic devices is described based on surface plasmon devices fabricated in our group. These devices were fabricated on silicon with conventional CMOS processes. In the devices, light-wave signals are converted into surface plasmon signals with a grating and detected with a Schottky-type diode on a silicon substrate. Both intensity and frequency signals are transmitted along the surface plasmon waveguide in the nanoscale circuit. Such signals were easily amplified with MOSFETs integrated monolithically on the silicon substrate. Here, the wavelength of light used in the circuit is set within the 1550-nm-wavelength band to prevent signals absorption by silicon. This can lead to a simpler structure for waveguides and devices on silicon substrates. These techniques and devices will open a new phase for surface plasmon circuits integrated with electronic devices on silicon substrates.