Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

Cho, Chu Young; Zhang, Yinjun; Cicek, Erdem; Rahnema, B.; Bai, Y.; McClintock, Ryan; Razeghi, Manijeh

doi:10.1063/1.4809521

Cited by 72 publications

(51 citation statements)

References 19 publications

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“…[1][2][3] UV-LEDs are targeted for a wide range of potential applications, such as water purification, sterilization, biological detection, medical treatment, and high-density optical recording. [4][5][6] For these devices, hexagonal AlGaN is one of the most suitable materials because its Al content-dependent energy band gap lies within the range of 3.4 -6.2 eV at 300 K. Unfortunately, due to the low surface migration rate of Al atoms and the strong parasitic reaction inside AlGaN epilayers grown by metal organic chemical vapor deposition (MOCVD), adduct compounds are usually generated; these tend to be converted into solid particles of Al and Ga, resulting in poor crystal quality. So far, the crystal quality and optical properties of AlGaN epilayers and their relationship with growth parameters, such as substrate temperature, precursor flow rates, and dopants employed, have been studied by many researchers using photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM).…”

Section: Introductionmentioning

confidence: 97%

Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1−x N epitaxial layer

Wang

Zhang

Yang

et al. 2015

Electron. Mater. Lett.

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Section: Introductionmentioning

confidence: 97%

Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1−x N epitaxial layer

Wang

Zhang

Yang

et al. 2015

Electron. Mater. Lett.

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“…In previous studies of the localized surface-plasmon-enhanced GaN-based LEDs, a metallic nanoparticle layer was embedded in the n-or p-GaN layer of LEDs [19][20][21][22]. It is believed that the coupling of spontaneous emission from InGaN/GaN multiple quantum wells (MQWs) with the localized surface plasmons (LSPs) of metal/dielectric nanostructures can be enhanced light emission by improving the IQE of the device.…”

Section: Introductionmentioning

confidence: 99%

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Chuang

Lin

et al. 2015

SPIE Proceedings

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Recently, near-ultraviolet light-emitting diodes (NUV-LEDs) have been used in many applications such as light sources for ultraviolet curing, environmental cleaning, biomedical instrumentation, counterfeit bill detection and phosphor-based white LEDs. However, it is difficult to fabricate NUV-LEDs with high emission efficiency. As the wavelength of NUVLEDs decreases, the most dominant emission will be photons with transverse-magnetic (TM) polarization. For LED structures grown on a c-plane substrate, TM-light propagates mainly in the lateral direction, and it suffers strong effects of total internal reflection (TIR) due to the large incident angle on the interface. Therefore, light extraction efficiency (LEE) of NUV-LEDs is still lower than that of visible LEDs. In this study, a spin coating process in which the grating structure comprises the metallic nanoparticle layer coated on a p-GaN top layer was developed. Various sizes of metallic nanoparticles forming a suspended nanoparticle layer (SNL) embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The SNL enhanced the light extraction efficiency of NUVLEDs. Light output power was 1.4 times the magnitude of that of conventional NUV-LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently distributed over the surface area. Device performance can be improved substantially by using the three-dimensional distribution of metallic nanoparticles in the SNL, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through TIR.Keywords: Surface plasmon, nanoparticle, light-emitting diode (LED), internal quantum efficiency (IQE), external quantum efficiency (EQE), light extraction efficiency (LEE), electroluminescence spectrum, metal-organic chemical vapor deposition (MOCVD), localized surface plasmons (LSPs), transparent conductive layer.

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“…The ultraviolet, blue, and green LEDs with SP-coupling have been reported with the improved internal quantum efficiency. 1,2,[4][5][6][7][8] In these reports, metal nano-structures (NS) are used for the effective SP coupling with nitride-based quantum well (QW) and radiation of the SP polariton (SPP) or localized SP (LSP). Thus, the metal nano-structures 9 are very important to enhance the emission efficiency of SP-coupling LED.…”

Section: Introductionmentioning

confidence: 99%

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

Liu

Zhang

et al. 2015

Journal of Applied Physics

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Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620 nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO 2 structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%-53% as compared to that for the SiO 2 coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO 2 structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer. V C 2015 AIP Publishing LLC.

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Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

Cited by 72 publications

References 19 publications

Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1−x N epitaxial layer

Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1−x N epitaxial layer

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

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