2019
DOI: 10.1016/j.apsusc.2019.03.228
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Surface polarity control in ZnO films deposited by pulsed laser deposition

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Cited by 33 publications
(22 citation statements)
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“…Transparent conducting oxide (TCO) thin films based on zinc oxide (ZnO) have received much interest because of relatively inexpensiveness compared to indium tin oxide (ITO). ZnO is a multifunctional II-VI group semiconductor which creating a center of attention to researchers because of its fascinating properties such as wide band gap of 3.37 eV at room temperature, large exciton binding energy (60 meV), high optical transparency, high surface stability, large electrochemical coupling coefficient and strong excitonic emission etc (Dehkordi et al, 2019;Luo et al, 2019;Gandhi et al, 2019;Karim et al, 2015aKarim et al, , 2016. Although, stoichiometric ZnO is an insulator, it exists as an n-type semiconductor partially due to its deviation from stoichiometry i.e., due to the presence of interstitial Zn atoms (Zn i ) in large voids and the presence of oxygen vacancies (V o ) in the crystal lattice and partially due to the presence of background donors such as H and Al (Joseph et al, 1999).…”
Section: Introductionmentioning
confidence: 99%
“…Transparent conducting oxide (TCO) thin films based on zinc oxide (ZnO) have received much interest because of relatively inexpensiveness compared to indium tin oxide (ITO). ZnO is a multifunctional II-VI group semiconductor which creating a center of attention to researchers because of its fascinating properties such as wide band gap of 3.37 eV at room temperature, large exciton binding energy (60 meV), high optical transparency, high surface stability, large electrochemical coupling coefficient and strong excitonic emission etc (Dehkordi et al, 2019;Luo et al, 2019;Gandhi et al, 2019;Karim et al, 2015aKarim et al, , 2016. Although, stoichiometric ZnO is an insulator, it exists as an n-type semiconductor partially due to its deviation from stoichiometry i.e., due to the presence of interstitial Zn atoms (Zn i ) in large voids and the presence of oxygen vacancies (V o ) in the crystal lattice and partially due to the presence of background donors such as H and Al (Joseph et al, 1999).…”
Section: Introductionmentioning
confidence: 99%
“…Of course, cost control is also considered to be a key factor for the applications of the ZnO thin films. In the past decades, ZnO thin films have been synthesized by metal-organic chemical vapor deposition (MOCVD) [22], molecular beam epitaxy (MBE) [23], pulsed laser deposition (PLD) [24], magnetron sputtering [11], thermal evaporation [25], sol-gel method [26], etc. [27,28].…”
Section: Introductionmentioning
confidence: 99%
“…The background pressure was 10 −4 mbar. The samples were grown on the c-sapphire substrate with different oxygen pressures P(O 2 ) of 0 Pa, 1 Pa and 3 Pa for the fixed growth time of 3 h. This method of growth yields undoped ZnO films with the polarity of O-face [41]. The annealing was carried out in Ar atmosphere for a period of 45 min.…”
Section: Methodsmentioning
confidence: 99%