Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

Park, Yeong-Hun; Yi, Boram; Kim, Seunghwan; Shim, Ju Hyun; Song, Hyun Keun; Song, Hyun-Dong; Shin, Hyun-Jin; Lee, Hi Deok; Yang, Ji-Woon

doi:10.1109/ted.2021.3087117

Cited by 4 publications

(1 citation statement)

References 22 publications

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“…[1] Compared with metal-oxide-semiconductor field-effect transistors, tunnel field-effect transistors (TFETs) have a lower power consumption that can significantly reduce the power loss of integrated circuits. [2] Although much research has been carried out on TFET devices in recent years, TFETs still have the problem of a low on-state current; this has become one of the key issues limiting the development of TFET devices. [3] In recent years, researchers have fabricated n-TFET devices with higher currents by optimizing TFET devices, [4][5][6] and their on-state currents can reach up to 10 −5 A•µm −1 .…”

Section: Introductionmentioning

confidence: 99%

High on-state current p-type tunnel effect transistor based on doping modulation

Jiale

Zhang

et al. 2023

Chinese Phys. B

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With the goal of solving the problem of the low on-state current in p-TFETs, this paper analyzes the mechanism of adjusting the tunneling current of the TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. The doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of the same structure devices. This method provides a new idea for the realization of high on-state current TFET devices.

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