Surface-Potential-Based Compact Model of Bulk MOSFET

MAPP: The Berkeley Model and Algorithm Prototyping Platform

“…Device Example: MOSFET Models in MAPP Fig. 15 shows the characteristic curves of several MOSFET models implemented in MAPP: BSIM6.1.0 [18], PSP level 103, version 3.0 [19], [20], the MIT Virtual Source (MVS) model, version 1.0.1 [21], MOS11 level 1101 version 2 [22]. The MVS model was hand-coded in ModSpec based on equations published in [21]; the rest were ported into MAPP using CoMeT, its Verilog-A parser and translator.…”

Parameter extraction for relaxation-time based non-quasi-static MOSFET models

“…As a basis we use the surface-potential based PSP MOSFET model [8]. Previous RTA approaches only apply relaxation to the total inversion charge.…”

Design applications of compact MOSFET model for extended temperature range (60–400K)

“…where m 0 is the low field mobility, m E and u m are the model parameters for vertical field dependence which combines surface roughness scattering and surface phonon scattering mechanisms, C is the model parameter quantifying the effect of Coulomb scattering (critical for the cryogenic operation), and q i and q b are normalised inversion and bulk charge, respectively, at the 'surface potential midpoint' [2]. In the original PSP model the temperature variation of m 0 is given by…”

“…This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.Introduction: Two industry standard MOSFET models, BSIM [1] and PSP [2], are developed for the traditional temperature range (233-400 K) and have no real capabilities below 200 K. Hence they are not directly applicable to circuit simulations in the extended temperature range which may include cryogenic temperatures. Recent progress in the formulation of the surface-potential-based approach [3, 4] enables simulations for the 60 -400 K range that retain all the capabilities of the original PSP model including an extremely accurate and physical description of device characteristics and secondary effects in all regions of operation.…”

“…Introduction: Two industry standard MOSFET models, BSIM [1] and PSP [2], are developed for the traditional temperature range (233-400 K) and have no real capabilities below 200 K. Hence they are not directly applicable to circuit simulations in the extended temperature range which may include cryogenic temperatures. Recent progress in the formulation of the surface-potential-based approach [3,4] enables simulations for the 60 -400 K range that retain all the capabilities of the original PSP model including an extremely accurate and physical description of device characteristics and secondary effects in all regions of operation.…”