Abstract:The effect of surface potential on the carrier mobility and piezoresistance of core–shell silicon carbide nanowires (SiC NWs) was investigated to realize small and sensitive SiC-microelectromechanical systems sensors. The p-type cubic crystalline SiC (3C-SiC) NWs were synthesized via the vapor–liquid–solid method and coated with silicon dioxide (SiO2) or aluminum oxide (Al2O3) dielectric shells to form core–shell structured NWs with different surface potentials. Four-point bending devices (FBDs) with a field-e… Show more
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