Surface Preparation as a Step in the Fabrication of Biosensors Based on Silicon Nanowire Field-Effect Transistors: Review

Nikonov, A. M.; Naumova, O. V.; Генералов, В. М.; Сафатов, А. С.; Fomin, B. I.

doi:10.1134/s1027451020020500

Cited by 9 publications

(6 citation statements)

References 72 publications

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“…Therefore, the mixed-SAMs solution was adopted to modify the surfaces of SiNW-FET sensors. As for the APTES- and APS-modified surfaces, the results of AFM images were consistent with previous reports that structural irregularities commonly existed in the APTES-derived layer [ 30 , 31 ]. Hence, the values of the Ra and RMS roughness for APTES-modified surfaces are larger than those prepared with the other two silanization methods.…”

Section: Discussionsupporting

confidence: 90%

“…Individual silane molecules were incorporated into the layer by reacting/interacting with the functionalities, such as electrostatic attraction, hydrogen bonding, covalent bonding, etc., shown at the interface [ 28 ]. In practice, the polycondensation product, physical adsorption, and molecular reversion were often generated in the APTES layer [ 31 ]. APS is a valuable alternative to APTES, which is less reactive and highly resistant to polymerization at neutral pH [ 32 , 33 ].…”

Section: Discussionmentioning

confidence: 99%

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Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors

et al. 2023

Sensors

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Interleukin 6 (IL-6) has been regarded as a biomarker that can be applied as a predictor for the severity of COVID-19-infected patients. The IL-6 level also correlates well with respiratory dysfunction and mortality risk. In this work, three silanization approaches and two types of biorecognition elements were used on the silicon nanowire field-effect transistors (SiNW-FETs) to investigate and compare the sensing performance on the detection of IL-6. Experimental data revealed that the mixed-SAMs-modified silica surface could have superior surface morphology to APTES-modified and APS-modified silica surfaces. According to the data on detecting various concentrations of IL-6, the detection range of the aptamer-functionalized SiNW-FET was broader than that of the antibody-functionalized SiNW-FET. In addition, the lowest concentration of valid detection for the aptamer-functionalized SiNW-FET was 2.1 pg/mL, two orders of magnitude lower than the antibody-functionalized SiNW-FET. The detection range of the aptamer-functionalized SiNW-FET covered the concentration of IL-6, which could be used to predict fatal outcomes of COVID-19. The detection results in the buffer showed that the anti-IL-6 aptamer could produce better detection results on the SiNW-FETs, indicating its great opportunity in applications for sensing clinical samples.

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Section: Discussionsupporting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors

et al. 2023

Sensors

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“…At the same time, although silicon nanowires are considered promising for future biomedical sensors, their limited stability under physiological conditions is a challenge for sensor development. Solving this issue by surface engineering as described above opens up new possibilities for sensor improvements [ 81 , 196 , 197 ].…”

Section: Technological Key Elements For Sinw-based Device Integrationmentioning

confidence: 99%

Functional Devices from Bottom-Up Silicon Nanowires: A Review

et al. 2022

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.

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Section: Modulation Thanks To Interface Surrounding the Channelmentioning

confidence: 99%

Silica and Silicon Based Nanostructures

2022

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Surface Preparation as a Step in the Fabrication of Biosensors Based on Silicon Nanowire Field-Effect Transistors: Review

Cited by 9 publications

References 72 publications

Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors

Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors

Functional Devices from Bottom-Up Silicon Nanowires: A Review

Silica and Silicon Based Nanostructures

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