Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Goodrich, Justin C.; Farinha, Thomas G.; Ju, Ling; Howzen, Alexandra; Kundu, Animesh; Ogidi-Ekoko, Onoriode N.; Wierer, Jonathan J.; Tansu, Nelson; Strandwitz, Nicholas C.

doi:10.1016/j.jcrysgro.2020.125568

Journal of Crystal Growth

2020

DOI: 10.1016/j.jcrysgro.2020.125568

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Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Justin C. Goodrich

Thomas G. Farinha

Ling Ju

et al.

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Cited by 8 publications

References 24 publications

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Measurement and Analysis of Surface Temperature Gradients on Magnetron Sputtered Thin Film Growth Studied Using NiCr/NiSi Thin Film Thermocouples

Liu,

Yang,

Sun

et al. 2024

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In the general analysis of thin‐film growth processes, it is often assumed that the temperature of the film growth surface is the same as the temperature of the film growth substrate. However, a temperature gradient exists between the film growth surface and film growth substrate. Using the growth surface of TiO2 thin films as an example, the temperature gradient of the film growth surface is tested and analyzed. A NiCr/NiSi thin‐film thermocouple is fabricated using the direct‐current pulse magnetron sputtering method. A three‐layer NiCr/NiSi thin‐film thermocouple temperature measurement system is established to measure the temperature gradient of the film growth surface. The growth surface temperature and substrate temperature of the TiO2 thin films are measured. For a sputtering power density of 0.83 W cm−2, the temperature difference between the first and second layers is 104.79 °C, while the temperature difference between the second and third layers is 39.92 °C. A standard K‐type thermocouple is used to measure the substrate temperature, which is recorded to be 132.05 °C, consistent with common measurements of substrate temperature. The heat conduction on the film growth surface in the vacuum chamber is examined and a model for the temperature measurement device during film growth is constructed.

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Measurement and Analysis of Surface Temperature Gradients on Magnetron Sputtered Thin Film Growth Studied Using NiCr/NiSi Thin Film Thermocouples

Liu,

Yang,

Sun

et al. 2024

Small

View full text Add to dashboard Cite

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Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Ogidi-Ekoko

Goodrich

Howzen

et al. 2020

Solid-State Electronics

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Effect of substrate temperature on growth mechanism and properties of PEALD-MgO dielectric films for amorphous-IGZO TFTs

Su,

Zhang,

Lin

et al. 2024

Surface and Coatings Technology

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Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

Cited by 8 publications

References 24 publications

Measurement and Analysis of Surface Temperature Gradients on Magnetron Sputtered Thin Film Growth Studied Using NiCr/NiSi Thin Film Thermocouples

Measurement and Analysis of Surface Temperature Gradients on Magnetron Sputtered Thin Film Growth Studied Using NiCr/NiSi Thin Film Thermocouples

Electrical properties of MgO/GaN metal-oxide-semiconductor structures

Effect of substrate temperature on growth mechanism and properties of PEALD-MgO dielectric films for amorphous-IGZO TFTs

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