Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

Abstract

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.

A.C. Recombination Velocity as Applied to Determine n<sup>+</sup>/p/p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness

“…As the modulation frequency increases, the density of the generated carriers decreases and is folded back to the junction [27], the optimum thickness (Hopt) decreases (in dynamic state, i.e. -The base's doping rate (Nb) [43].…”

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

“…The current-voltage characteristics, under constant illumination of the solar cell having different base thicknesses, are simulated and the efficiency is obtained according to the thickness and under the influence of the surface recombination velocity [31]. The influence of thickness is highlighted in dynamic regime [16] [30] [32] through the constant decay time, as well as in studies of the solar cell in 3D model [24] [33] [34] where the electrical (D, Sf, Sb) [35] [36] and geometry (grain size) [37] parameters are involved.…”

n<sup>+</sup>-p-p<sup>+</sup> Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

“…The phenomenological parameters to be determined are, diffusion length (L), diffusion coefficient (D), lifetime (τ), surface recombination velocities respectively at the junction (Sf) and the rear (Sb) [20] [21] [22] [23] [24]. The imposed both, thickness (H) [25] and doping rate [26] are to be take into account. The applied external conditions such as, radiation flux and energy [27], temperature and magnetic field [28] [29] [30], influence the phenomenological parameters.…”