2022
DOI: 10.1021/acsenergylett.2c01624
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Surface Reconstruction for Tin-Based Perovskite Solar Cells

Abstract: Open-circuit voltage loss and instability from surface Sn(II) oxidation and high-density Sn vacancies pose great hurdles for developing highperformance Sn-based perovskite solar cells (PSCs). Turning attention from the bulk microstructure to surface reconstruction is promising to push the performance enhancement of Sn-based PSCs. Herein, a surface-modulation strategy based on 6-maleimidohexanehydrazide trifluoroacetate is rationally designed to reconstruct the surface structure of FASnI 3 films to manage the F… Show more

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Cited by 54 publications
(46 citation statements)
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“…Metal halide perovskites are regarded as revolutionary photovoltaic semiconductor materials, owing to their exceptional optoelectronic properties, including high light absorption coefficient, long carrier diffusion lengths and lifetimes, excellent charge carrier mobility, and low-cost fabrication. The single-junction lead halides perovskite solar cells (PSCs) have achieved a certified power conversion efficiency (PCE) of 25.7% over the past decades. , Despite such a remarkable PCE, the toxicity of lead remains a severe issue for commercial applications of lead halide PSCs. THPs are considered the leading alternative to lead-free perovskites due to their appropriate bandgap, excellent charge mobility, and hot carriers with long lifetime and diffusion length. However, due to the higher Lewis acidity of Sn 2+ than Pb 2+ , THPs suffer from a faster crystal growth rate and easier formation of Sn vacancy defects during the process of solution film-forming, leading to uncontrollable growth of the THP film with poor morphology and rich defects . Thus, an insight understanding and rational regulation of crystalline nucleation and growth dynamics of THPs are of great significance to improving the photovoltaic properties of THP solar cells.…”
mentioning
confidence: 99%
“…Metal halide perovskites are regarded as revolutionary photovoltaic semiconductor materials, owing to their exceptional optoelectronic properties, including high light absorption coefficient, long carrier diffusion lengths and lifetimes, excellent charge carrier mobility, and low-cost fabrication. The single-junction lead halides perovskite solar cells (PSCs) have achieved a certified power conversion efficiency (PCE) of 25.7% over the past decades. , Despite such a remarkable PCE, the toxicity of lead remains a severe issue for commercial applications of lead halide PSCs. THPs are considered the leading alternative to lead-free perovskites due to their appropriate bandgap, excellent charge mobility, and hot carriers with long lifetime and diffusion length. However, due to the higher Lewis acidity of Sn 2+ than Pb 2+ , THPs suffer from a faster crystal growth rate and easier formation of Sn vacancy defects during the process of solution film-forming, leading to uncontrollable growth of the THP film with poor morphology and rich defects . Thus, an insight understanding and rational regulation of crystalline nucleation and growth dynamics of THPs are of great significance to improving the photovoltaic properties of THP solar cells.…”
mentioning
confidence: 99%
“…Compared with Sb 2 S 3 ‐control device, the decreased carrier lifetime of Sb 2 S 3 ‐0.2 device suggests that it has stronger carrier transport and extraction capacity. [ 39 ] In addition, the Sb 2 S 3 ‐control device has a significantly slower decay time, which suggests the recombination is more severe in Sb 2 S 3 ‐control device. Therefore, TAS study successfully interprets the enhanced device performance in Sb 2 S 3 ‐0.2 device.…”
Section: Resultsmentioning
confidence: 99%
“…This synthesis condition can potentially lead to a more facile Sn­(II)-to-Sn­(IV) conversion. Second, the phase stability of inorganic Sn–Pb perovskites is poorer than that of their hybrid counterparts, which can lower the energy barrier for the oxidation reaction to occur. , It is known that the oxidation of Sn­(II) to Sn­(IV) in ITLP films inevitably leads to the formation of structural defects and charge-carrier traps, in particular on the surface and near-surface regions of ITLP films. These structural defects and charge-carrier traps may cause nonradiative recombination, inhibiting efficient carrier transport and injection across essential device interfaces. It can also create p-type doping on the top surface of the perovskite film, which adversely influences the energy level alignment in the PSC devices.…”
mentioning
confidence: 99%