Chalcogenide-based solar cells, such as Cu(In,Ga)(S,Se) 2 (CIGSSe), [1] CdTe, [2] Cu 2 ZnSn(S,Se) 4 (CZTSSe), [3,4] CuSb(S, Se) 2 , [5] NaSbS 2 , [6] AgBiS 2 , [7] SnS, [8] GeSe, [9] and Sb 2 (S,Se) 3 , [10,11] are emerging photovoltaic systems with great application potential. Currently, the record efficiencies of CIGSSe and CdTe photovoltaic devices are over 22%. [12] Furthermore, the certified efficiencies of CZTSSe [3] and Sb 2 (S,Se) 3 [13] solar cells have achieved ≥10% efficiencies. Besides, CZTS [14,15] and Sb 2 S 3 [16] have shown a bright application prospect because it does not contain the relatively rare and relatively expensive Se. In particular, it should be pointed out that Sb 2 S 3 solar cell has attracted extensive attention, due to its advantages of large absorption coefficient, suitable bandgap, earth-abundant, and nontoxic compositions. [17][18][19] However, the device performance of Sb 2 S 3 solar cell is still seriously limited by anion-vacancy-induced defects (i.e., V S and Sb S ) that make it obviously lower than the Sb 2 Se 3 or Sb 2 (S,Se) 3 photovoltaic devices. [20][21][22][23] Therefore, developing a mild, efficient, and low-cost method to suppress sulfur-vacancy-induced defects is an important solution to improve the device performances of Sb 2 S 3 solar cells.Currently, sulfuration is an efficient approach to passivate V S and Sb S defects of Sb 2 S 3 absorber layers due to its significant role in improving the content of S. There are five types of sulfur sources that have been reported to treat Sb 2 S 3 and CZTSSe absorber layers: elemental sulfur, [24] H 2 S, [25] thiourea (TU), [26,27] thioacetamide (TA), [28] and ammonium sulfide ((NH 4 ) 2 S). [29] Massspectrometric results have indicated that the presence of all possible S n molecules between S 2 and S 8 in measurable concentration between room temperature and the boiling point of sulfur (444.6 °C). [30] In addition, the highly active S 2 can only be guaranteed in large quantities at high temperatures, but Sb 2 S 3 cannot tolerate such annealing temperatures due to low melting point (550 °C), which makes it difficult to effectively passivate the defects in Sb 2 S 3 using elemental sulfur. At present, H 2 S sulfuration is the most efficient sulfuration method, but its high toxicity and corrosiveness greatly increase the complexity and danger. [25] Essentially, the sulfuration processes using TU, TA,