Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation

Park, S. D.; Oh, Chaeyoun; Lee, D. H.; Yeom, Geun‐Young

doi:10.1149/1.2073667

Cited by 22 publications

(20 citation statements)

References 14 publications

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“…These include electron cyclotron resonance plasma, 33,39,56,62,86,87 helicon source plasma, 49,88 TCP, 6 capacitively coupled plasma, 5,60,89 and inductively coupled plasma. 90 Other types of energetic species have also been evaluated, including ion beams, 40,48 neutral beams, 35,[50][51][52]68,69,83,[91][92][93][94][95][96] and laser beams. 32,66,67,97,98 While specialized equipment certainly plays an integral part in basic understanding of ALE, it may be more practical to adapt conventional etching equipment for use in ALE.…”

Section: Argon Ion Bombardmentmentioning

confidence: 99%

“…102 Fluorocarbons provide the fluorine reactant at room temperature without spontaneously etching, and will be discussed further in Sec. V C. Overall, chlorine has been the reactant of choice in reaction A of silicon ALE, 6,28,39,49,75,83,88,91 most typically by thermal chemisorption [ Fig. 9(a)].…”

Section: B Siliconmentioning

confidence: 99%

“…75 The use of neutral beam in the 2000s was applied to silicon ALE with the intention to minimize any charge-related damage. 91 In 2013, Kim et al used a neutral beam in ALE to remove damaged silicon at the bottom of a 20 nm-node high aspect ratio (HAR) contact. 28 Device benefits were indicated, as the resistance of the remaining silicon was similar to the unetched silicon.…”

Section: B Siliconmentioning

confidence: 99%

See 2 more Smart Citations

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

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Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

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Section: Argon Ion Bombardmentmentioning

confidence: 99%

Section: B Siliconmentioning

confidence: 99%

Section: B Siliconmentioning

confidence: 99%

See 1 more Smart Citation

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

View full text Add to dashboard Cite

show abstract

“…In ideal ALET, each cycle removes exactly one monolayer of a crystalline solid. The cycle can be repeated as many times as the number of monolayers to be removed [113,[126][127][128] There are two issues with traditional ALET. First, gas pulsing is a disadvantage, exacerbated by the fact that etching gases such as Cl 2 have a long residence time on the chamber walls, requiring long pumping periods before the inert gas plasma is ignited to execute step (3) above.…”

Section: Emerging Applicationsmentioning

confidence: 99%

Pulsed plasma etching for semiconductor manufacturing

Economou

2014

J. Phys. D: Appl. Phys.

172

123

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Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

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“…If the above precautions are not taken, etching with monolayer accuracy is not possible. Park et al [60] demonstrated ALET of single crystal silicon with chlorine (figure 7). They used an Ar neutral beam with ∼50 eV energy for step 3.…”

Section: Atomic Layer Etchingmentioning

confidence: 99%

Fast (tens to hundreds of eV) neutral beams for materials processing

Economou¹

2008

J. Phys. D: Appl. Phys.

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Fast neutral beams (beam energy of tens to hundreds of eV) may be useful for mitigating charging damage that can occur in conventional plasma processing of materials. For neutral beam processing to be viable, however, the beam energy, flux and directionality must be comparable to those in traditional reactive ion etching or reactive ion beam technologies. This paper provides a review of fast neutral beams for materials processing. Neutral beam generation techniques are outlined. Characterization of neutral beams is important to measure the beam flux, energy and angular distributions. Neutral beam materials processing is discussed with emphasis on etching of thin films.

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Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation

Cited by 22 publications

References 14 publications

Overview of atomic layer etching in the semiconductor industry

Overview of atomic layer etching in the semiconductor industry

Pulsed plasma etching for semiconductor manufacturing

Fast (tens to hundreds of eV) neutral beams for materials processing

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