Surface, structural and optical properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition

Li, Yao; Zhang, Chi; Luo, Xuguang; Liang, Yuanlan; Wuu, Dong Sing; Tin, C. C.; Lu, Xiang; He, Kai; Wan, Lingyu; Feng, Zhe Chuan

doi:10.1016/j.apsusc.2018.07.138

Cited by 31 publications

(16 citation statements)

References 30 publications

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“…The overall structure of the heterostructure is illustrated in Figure 2b The thicknesses of the layers were measured by STEM (Figure 2a) with values of 289 nm and 21 nm for the GaN film and the AlN buffer, respectively. The small thickness of the buffer layer was to be expected, given that the Al adatoms on the C-face have higher mobility and thus shorter time available for incorporation into the lattice, as already presented by Li et al [26], who studied the AlN growth on different face sapphire substrates. The overall structure of the heterostructure is illustrated in Figure 2b, showing the characteristic growth relationship P63mc GaN (0 0 0 2) || (0 0 0 2) AlN P63mc || (0 0 0 2) Al 2 O 3 R3c.…”

Section: Microstructural Characterizationmentioning

confidence: 70%

Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure

et al. 2019

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This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film. The structure of the GaN film, AlN buffer, Al2O3 substrate and their growth relationships were determined through HR-TEM. DBS studies were used to determine the effective positron diffusion length of the GaN film. Within the epitaxial layers, defined by a [GaN P 63 m c (0 0 0 2) || P 63 m c AlN (0 0 0 2) || (0 0 0 2) R 3 ¯ c Al2O3] relationship, regarding the GaN film, a strong correlation between defect densities, defect correlation lengths, and positron diffusion length was assessed. The defect densities ρ d e = 6.13 × 1010 cm−2, ρ d s = 1.36 × 1010 cm−2, along with the defect correlation lengths Le = 155 nm and Ls = 229 nm found in the 289 nm layer of GaN, account for the effective positron diffusion length Leff~60 nm.

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Section: Microstructural Characterizationmentioning

confidence: 70%

Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure

et al. 2019

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“…Wurztie AlN is the direct band gap semiconductor material with the largest band gap of 6.2 eV among the III-nitride semiconductors [ 1 , 2 ]. It is an ideal substrate material for ultraviolet optoelectronic devices and has huge application potential in the fields of solid-state light sources, ultraviolet sterilization and water treatment [ 1 , 3 , 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Zhao

Liu

et al. 2021

Materials

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Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (101¯3) orientation AlN film, the quality of which shows strong dependence on the nitridation temperature. The full width at half maximum of X-ray diffraction for (101¯3) AlN film was only 0.343° at the optimum nitridation temperature of 1300 °C. It is found that the nano-holes were formed on the surface of substrates by the decomposition of sapphire in the process of high-temperature nitridation, which is closely related to the quality improvement of AlN. At the critical nitridation temperature of 1300 °C, the average size of the nano-holes is about 70 nm, which is in favor of promoting the rapid coalescence of AlN micro-grains in the early stages. However, the size of nano-holes will be enlarged with the further increase of nitridation temperature, which begins to play a negative role in the coalescence of AlN grains. As a result, the grain size will be increased and extended to the epilayer, leading to the deterioration of the AlN film.

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“…S5†). 45,46 The composition analysis demonstrated the formation of Li 3 N with high ionic conductivity and lithiophilic Li–Al alloy in the AlN layer after the initial discharge process, which allows for fast transport of Li ions near the electrode interface to alleviate the space charge layer, thus effectively stabilizing the electrode interface and inhibiting the lithium dendrite growth.…”

Section: Resultsmentioning

confidence: 99%