Surface Tension at Elevated Temperatures. I. Furnace and Method for Use of the Sessile Drop Method; Surface Tension of Silicon, Iron and Nickel

Kingery, W. D.; Humenik, M.

doi:10.1021/j150504a026

Cited by 138 publications

(30 citation statements)

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“…Solid circles and open circles are measurements of the present work using the constrained drop and the traditional sessile drop methods, respectively. Both data are within the scatter of reported values (solid lines 9,[27][28][29][30][31][32][33][34][35][36][37] in Fig. 8: Every data referred in this contribution (Figs.…”

Section: Surface Tension Of Liquid Agsupporting

confidence: 81%

Improvements in Surface Tension Measurements of Liquid Metals Having Low Capillary Constants by the Constrained Drop Method

et al. 2004

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Accurate measurements of surface tension of liquid metals having low capillary constants (the ratio between density (r) and surface tension (s), r/s) have been attempted using the constrained drop method. High accuracy of surface tension measurements was obtained by making a large axi-symmetric liquid drop and adopting a developed image capturing system composed of a high-resolution charge-coupled device (CCD) camera, an additional CCD camera to adjust the level of the metal drop and a He-Ne laser.

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Section: Surface Tension Of Liquid Agsupporting

confidence: 81%

Improvements in Surface Tension Measurements of Liquid Metals Having Low Capillary Constants by the Constrained Drop Method

et al. 2004

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“…is close to the reported experimental values (for Si; 0.22 [10], 0.28 [25], 0.308 [26] and 0.65 [27], and 0.08 mJ m −2 K −1 for Ge [11]). However, our results may be strictly compared with experimental surface tension data, as a function of temperature for molten Si and Ge, reported by others [22,[28][29][30][31][32]. Therefore, the model looks acceptable and predicts the same order of magnitude values for the temperature dependence of the surface tension of metals (Ga), metalloids (Ge), and nonmetals (Si).…”

Section: Calculations and Discussionsupporting

confidence: 71%

Theoretical Study of a Thermophysical Property of Molten Semiconductors

Aqra

Ayyad

2011

Journal of Metallurgy

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This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687-1825 K and 1211-1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as γ = 876 − 0.32 (T − T m ) and γ = 571 − 0.074 (T − T m ) (mJ m −2 ), respectively. These values are in consistence with the reported experimental data (720-875 for Si and 560-632 mJ m −2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.

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“…The values from Grobner et al were calculated by using ThermoCalc software [18]. a) b) c) Figure 2: Characteristic physical variables of liquid silicon versus temperature: a) surface tension [24][25][26][27][28][29][30][31][32][33][34][35], b) density [30,[34][35][36][37][38][39] and c) dynamic viscosity [30,35,40]. …”

Section: Resultsmentioning

confidence: 99%

SiC/Si composites elaboration by capillary infiltration of molten silicon

Roger

Guesnet

Marchais

et al. 2018

Journal of Alloys and Compounds

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Infiltration of molten metal into ceramic performs without external pressure is a promising fabrication method for metal-matrix composites. Thus, this research is focused on the kinetic of capillary infiltration in the processing of Si/SiC composites. The calculation of the infiltration kinetics for a liquid in a porous material is possible by applying the modified-Washburn equation which involves the effective diameter of the pores. This equation implies a K value depending on the wetting angle, the density, the viscosity and the surface tension of the liquid at a given temperature. In this study, the main aim was to measure the K Si value of molten silicon infiltration into porous SiC at 1500°C. On this way, consolidated β-SiC powder compacts were prepared for infiltration experiments. The effects of the SiC particles presintering on the pore size were examined as they can affect molten silicon infiltration. So, the monitoring of the mass increase during hexadecane rise was used to determine the effective diameter of the pores. It was evidenced that an increase of 15.5% of the initial effective diameter occurs. Consequently, a corresponding correction has to be applied to the initial effective diameter of the siliconinfiltrated compacts. Infiltrations of pure molten silicon into SiC compacts were successfully carried out at 1500°C under high vacuum (5.10 -3 mbar) and the average value of K Si was found equal to (5.8±0.4)×10 -6 cm 5 .s.g -2 . The effect of molten silicon rise on the porosity was also considered.

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Surface Tension at Elevated Temperatures. I. Furnace and Method for Use of the Sessile Drop Method; Surface Tension of Silicon, Iron and Nickel

Cited by 138 publications

References 1 publication

Improvements in Surface Tension Measurements of Liquid Metals Having Low Capillary Constants by the Constrained Drop Method

Improvements in Surface Tension Measurements of Liquid Metals Having Low Capillary Constants by the Constrained Drop Method

Theoretical Study of a Thermophysical Property of Molten Semiconductors

SiC/Si composites elaboration by capillary infiltration of molten silicon

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