2017
DOI: 10.1016/j.ijleo.2016.11.175
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Surface topography study of CdS thin film nanostructure synthesized by CBD

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Cited by 17 publications
(10 citation statements)
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“…In addition, as shown in the granularity cumulation distribution charts in Figure 3 , the diameter range for the pure PANI sample was between 0.15 μm and 1.75 μm. After 120 s of I 2 doping, however, the diameter range became much wider, between 0.55 μm and 2.95 μm, due to particle aggregation, thereby increasing the grain size [ 18 , 19 , 20 ]. As the grain sizes determine the number of grain boundaries, the increase in the average grain diameter from 0.5 μm to 1.8 μm means that increasing the I 2 doping time increases the grain size and simultaneously decreases the number of grain boundaries.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, as shown in the granularity cumulation distribution charts in Figure 3 , the diameter range for the pure PANI sample was between 0.15 μm and 1.75 μm. After 120 s of I 2 doping, however, the diameter range became much wider, between 0.55 μm and 2.95 μm, due to particle aggregation, thereby increasing the grain size [ 18 , 19 , 20 ]. As the grain sizes determine the number of grain boundaries, the increase in the average grain diameter from 0.5 μm to 1.8 μm means that increasing the I 2 doping time increases the grain size and simultaneously decreases the number of grain boundaries.…”
Section: Resultsmentioning
confidence: 99%
“…Transmittance decrease when the CdS nanoparticles are included due to greater amounts of material having dispersed on the surface, as observed in Figure 3 , lines B1 and B2 and in Figure 4 lines D1 and D2. The decrease in the transmittance indicates that there is better homogeneity and lower roughness in the thin film [ 8 , 13 ]. When thermal treatment is applied the material becomes denser and transmittance is reduced [ 40 ].…”
Section: Resultsmentioning
confidence: 99%
“…In this way, CdS is an II-IV (binary) type n semiconductor with excellent properties, such as a band gap of 2.42 eV at room temperature, with high carrier concentration (10 16 –10 18 cm − 3 ) and mobility (0.1–10 cm 2 V − 1 s − 1 ), a high absorption coefficient (>10 4 cm −1 ), and high electrochemical stability [ 7 , 8 , 9 ]. These properties have led to its effective development for photovoltaic solar cells [ 10 ], light-emitting diodes [ 5 ], photoelectric devices [ 11 ], chemical sensors [ 12 ], surface acoustic wave devices, thin film transistors (TFTs) [ 6 , 7 , 13 ], photocatalysis and biological sensors, optical coding, optical data storage and sensing, non-linear integrated optical devices [ 5 , 14 , 15 ] and photocatalytic hydrogen generation [ 16 ].…”
Section: Introductionmentioning
confidence: 99%
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“…The absorption peak of the CdS thin films was located at 493 nm, whereas the absorption edge of bulk CdS was blue shifted to 515 nm as a result of the decrease in the average size of CdS particles (3.92 nm). Thus, the co-sensitizing effect of CdS can enhance the performance of the QDSSC [23]. Furthermore, the band gaps of the grown CdS thin films were calculated from the following equation [24,25]:…”
Section: Resultsmentioning
confidence: 99%