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Zinc oxide nanostructured with different seeding layer annealing temperature have been synthesized by drop casting technique on FTO coated glass substrate. The optimized seeding layer have employed to synthesis ZnO nanorods were growth aqueous solutions method of zinc nitrate and HML as precursors with different growth temperatures. FESEM supported by EDS results showed significant information of ZnO topographic surface. X- Ray diffraction scan demonstrate a hexagonal wurtzite structure with c-axis orientation of the ZnO nanorods. Strong ultraviolet (UV) emission of ZnO nanorods has detected by UV visible measurement. The obtained results have analyzed optimize annealing temperature of ZnO seeding layer and suitable growth temperature of ZnO nanorods, with crystal hexagonal ZnO nanorods and homogenous distribution with 95°C growth temperature

The electrical properties of the Sb films were studied with different annealing temperatures, these films were deposited on glass substrates at room temperature thermal evaporation technique with thickness (0.5 μm), all samples are annealed in a vacuum for one hour. the d.c conductivity for all deposited films decreases from 17.54 × 10−2 to 12.23 × 10−2 (Ω.cm)−1 with increase of annealing temperature form 373K to 473 K. Increasing of annealing temperature from 373K to 473K, caused the electrical activation energies Ea1 and Ea2 to increase from 0.014 to 0.021eV and from 0.026 to 0.033eV respectively. Hall measurements showed that all the films are p-type.