Surface treatment of GaN and InN using (NH ₄ ) ₂ S _x

Abstract

The effects of (NH 4 ) 2 S x treatment on GaN and InN surfaces were investigated by X-ray photoelectron spectroscopy. It was found that native oxide layers were removed from nitride surfaces by HCl and (NH 4 ) 2 S x treatments and that S-terminated surface layers were formed. In addition, the S-terminated layer on the GaN surface was removed by H* irradiation. The usefulness of the combination of (NH 4 ) 2 S x treatment and post H* irradiation was shown.

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

“…Proper surface passivation for both bulk and nanostructured GaN can reduce surface states density and improve minority carrier diffusion 44 and light emission. 49,50 In conclusion, using CL-STEM, we identified the position of a p-n junction with high spatial resolution inside a single GaN nanorod. The overlap of the CL signals from n-and p-doped GaN was shown to be limited only by carrier diffusion.…”

Titanium–indium oxy(nitride) with and without RuO2 loading as photocatalysts for hydrogen production under visible light from water

“…These results are close to the reported values for bulk InN (444.3 eV). [7,13] Therefore, XPS further confirms the formation of InN.…”

Fabrication of hydrophilic S/In2O3 core–shell nanocomposite for enhancement of photocatalytic performance under visible light irradiation

“…For In, the peak located at 451.44 eV corresponds to the In 3d 3/2 and another one located at 443.89 eV is assigned to In 3d 5/2 [37][38][39]. The splitting between 3d 3/2 and In 3d 5/2 is 7.55 eV, demonstrating a normal state of In 3+ respectively [38,39]. What's more, the S 2p core line fixed at 163.9 eV is assigned to the element S, confirming that S remained element sulfur after ball-milling with In 2 O 3 .…”