Surface treatments and magnetic properties of Ga1−xMnxAs thin films

Maccherozzi, F.; Panaccione, G.; Rossi, G.; Hochstrasser, M.; Sperl, Matthias; Reinwald, Matthias; Woltersdorf, Georg; Wegscheider, Werner; Back, Christian

doi:10.1016/j.susc.2007.04.090

Cited by 8 publications

(9 citation statements)

References 18 publications

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“…reaches a maximum of 30%, which is in good agreement with reported values at room temperature [10][11][12]. The Mn XMCD asymmetry value is about 15% at 4 K, considerably larger than results reported earlier [13,23], indicating that a larger number of the Mn ions is contributing to the magnetic order in our samples than expected from the nominal concentration of Mn in the (Ga,Mn)As layer, with excellent agreement with published results [21,[26][27][28][29][30][31].…”

Section: B Polarized Neutron Reflectometrysupporting

confidence: 93%

Interfacial exchange coupling in Fe/(Ga,Mn)As bilayers

et al. 2014

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We carried out a systematic study of magnetic order and magnetic interlayer coupling in Fe/(Ga,Mn)As bilayers using superconducting quantum interference device magnetometry, polarized neutron reflectometry, element-specific x-ray absorption spectroscopy, x-ray magnetic circular dichroism, and x-ray specular reflectivity. Our results clearly show that Fe/(Ga,Mn)As bilayers are strongly exchange coupled at the interface. However, contrary to recent reports in the literature, we observe a ferromagnetic rather than antiferromagnetic coupling between the magnetic moments of the Mn ions and the Fe layer. It is interesting in this context that the surface region of the (Ga,Mn)As layer that is in direct contact with the Fe film displays a nearly identical coercivity to that of Fe (indicating perfect ferromagnetic coupling of that region), while the bulk of the (Ga,Mn)As layer, which is more weakly ferromagnetically coupled with Fe, shows a significantly smaller coercive field.

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Section: B Polarized Neutron Reflectometrysupporting

confidence: 93%

Interfacial exchange coupling in Fe/(Ga,Mn)As bilayers

et al. 2014

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“…Details are given elsewhere. 14,15 Reference samples were obtained by HCl etching. The Fe growth rate was controlled in situ by quartz monitors and the Fe overlayers were prepared as stepped wedges with discrete thickness values to ensure that the growth conditions were identical for all thicknesses in the covered range from 0 to 23 ML.…”

Section: Methodsmentioning

confidence: 99%

“…The magnetic anisotropy axis of both Fe and ͑Ga,Mn͒As layer, determined by a superconducting quantum interference device magnetometer and by magneto-optical Kerr effect ͑MOKE͒, closely resembles Fe/GaAs͑001͒ and the nontreated ͑Ga,Mn͒As/GaAs͑001͒, respectively, excluding sizeable variations in the magnetic properties after the Ar + bombardment. [14][15][16] Moreover, the Curie temperature of the sputtered ͑Ga,Mn͒As is identical to the one of the as-grown samples ͑T c =67Ϯ 3 K͒. Figure 1͑a͒ presents MOKE results.…”

Section: Methodsmentioning

confidence: 99%

Identifying the character of ferromagnetic Mn in epitaxial Fe/(Ga,Mn)As heterostructures

et al. 2010

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We demonstrate that the growth of Fe/͑Ga,Mn͒As heterointerfaces can be efficiently controlled by epitaxy and that robust ferromagnetism of the interfacial Mn atoms is induced at room temperature by the proximity effect. X-ray magnetic circular dichroism and x-ray resonant reflectivity data, supported by theoretical calculations, were used to monitor both temperature and magnetic field dependence of the Mn magnetic moment in the semiconducting host. We identify distinct Mn populations, each of them with specific magnetic character.

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“…54,55,[57][58][59][60][62][63][64][65][66][67][68] Figures 5͑a͒ and 5͑b͒ present experimental XAS and XMCD spectra 57 of ͑Ga,Mn͒As at the Mn L 2,3 edges together with the spectra calculated in the LSDA. The theory reproduces reasonably well the experimental Mn L 2,3 XAS.…”

Section: Xmcd Spectra At the L 23 Edgesmentioning

confidence: 99%

X-ray magnetic dichroism in III-V diluted magnetic semiconductors: First-principles calculations

2010

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The electronic structure of the ͑Ga,Mn͒As, ͑Ga,Mn͒N, and ͑Ga,Gd͒N, diluted magnetic semiconductors ͑DMSs͒ were investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band-structure method. The electronic structure is obtained with the local spin-density approximation ͑LSDA͒, as well as the LSDA+ U method. The x-ray magnetic circular and linear dichroism ͑XMCD and XMLD͒ spectra at the Mn, As, Ga, and N K and Gd, Mn, As, and Ga L 2,3 edges were investigated theoretically from first principles. The origin of the XMCD spectra in these compounds was examined. The effect of interstitial Mn atoms was found to be crucial for the x-ray magnetic dichroism at the Mn and As K and L 2,3 edges in the ͑Ga,Mn͒As DMS. The influence of the exchange splitting and spin-orbit coupling strength on each of the constituent atoms were furthermore analyzed. The orientation dependence of the XMCD and XMLD at the Mn L 2,3 edges in the ͑Ga,Mn͒As DMS was investigated by calculating the XMCD and XMLD spectra for the ͗001͘ and ͗110͘ magnetization axis. We found a quite small anisotropy in the XMCD and a giant anisotropy in the XMLD at the Mn L 2,3 edges. The exchange splitting of the initial Mn 2p core level was found to be responsible for huge magnetocrystalline anisotropy of the XMLD at the Mn L 2,3 edges. The calculated results are compared with available experimental data.

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Surface treatments and magnetic properties of Ga1−xMnxAs thin films

Cited by 8 publications

References 18 publications

Interfacial exchange coupling in Fe/(Ga,Mn)As bilayers

Interfacial exchange coupling in Fe/(Ga,Mn)As bilayers

Identifying the character of ferromagnetic Mn in epitaxial Fe/(Ga,Mn)As heterostructures

X-ray magnetic dichroism in III-V diluted magnetic semiconductors: First-principles calculations

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