2020
DOI: 10.1038/s41598-020-75944-3
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Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires

Abstract: A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core–shell wires and pol… Show more

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Cited by 5 publications
(2 citation statements)
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“…S5 a as functions of the cell area. With increasing electrode area, the resistance of the HRS exhibited a certain dependency whereas the resistance of the LRS showed an obviously slight variability, compared to the HRS, as a function of the area of the electrode, implying that the switching behaviors of our zein-based device are clearly caused by the filamentary resistance switching mechanism 34 , 35 . To determine the origin of the filaments in a zein insulating medium, we examined the temperature dependence of the resistance for the Al/zein/ITO device.…”
Section: Resultsmentioning
confidence: 89%
“…S5 a as functions of the cell area. With increasing electrode area, the resistance of the HRS exhibited a certain dependency whereas the resistance of the LRS showed an obviously slight variability, compared to the HRS, as a function of the area of the electrode, implying that the switching behaviors of our zein-based device are clearly caused by the filamentary resistance switching mechanism 34 , 35 . To determine the origin of the filaments in a zein insulating medium, we examined the temperature dependence of the resistance for the Al/zein/ITO device.…”
Section: Resultsmentioning
confidence: 89%
“…There are very few reports available on carbon-based RS devices [ 137 ]. In recent years, graphene oxide [ 138 , 139 ], diamond-like carbon [ 140 ], carbon quantum dots [ 141 ], single-walled carbon nanotube (SWCNT)@TiO 2 core–shell wires [ 142 ], graphene oxide-TiO 2 [ 143 ], self-generated amorphous carbon [ 144 ], graphene-integrated devices [ 145 ], and carbon nanotubes have been explored for use in RS memory applications [ 146 ], but very few of these have been electrochemically synthesized. Carbon materials have numerous advantageous properties related to their morphology, defects, percentage of oxygen groups, and sp 2 and sp 3 carbon atoms, and these properties can be utilized to tune the RS effect of a device [ 35 , 137 ].…”
Section: Electrodeposited Resistive Switching Materials For Memory St...mentioning
confidence: 99%