Switchable diode effect in ferroelectric thin film: High dependence on poling process and temperature

Abstract

Pb(Zr0.53Ti0.47)O3 (PZT) thin film was fabricated on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. Our results show a very great switchable ferroelectric diode effect (SFDE) in Pt-PZT-Au structure, which is more obvious and controllable than that in other ferroelectric thin films. The electrical conduction exhibits high rectifying behavior after pre-poling and the polarity of ferroelectric diode can be switched by changing the orientation of polarization in ferroelectric thin film. Our results also indicate that the SFDE in PZT film is highly dependent on remanent polarization and temperature. With the increase of remanent polarization, the forward current of bistable rectifying behavior observably reduces. Therefore, our measurement indicated that the biggest rectification ratio can reach about 220, which is found in 250K after +10V poling. By analyzing the conduction data, it is found that the dominant conduction mechanism of the SFDE in this sample is due to the space-charge-limited bulk conduction (SCLC), and Schottky emission (SE) may play subordinate role in forward bias voltage. Our observation demonstrates that SFDE may be general characteristic in ferroelectrics as long as proper electrodes chosen.

0D van der Waals interfacial ferroelectricity

“…2d , corresponding to a coercive electric field of 3 V/nm. Such a rectification switch and resistive modulation have been reported previously in metal-ferroelectric material-metal trilayer structures known as ferroelectricity diodes, where the sandwiched ferroelectric materials were ferroelectric film materials such as BiFeO 3 37 , Pb(Zr x Ti 1− x )O 3 (PZT) 50 , or Hf 1− x Zr x O 2 (HZO) 38 . Here, we demonstrate with the fabricated device that the 0D vdW interface could play as the essential module for ferroelectric diode-like behavior.…”

Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping

“…These capacitors show a diode-like behavior and the diode polarity can be switched by a P s reversal [19][20][21][22]. The switchable diode effect has been reported for several ferroelectrics such as PbTiO 3 [23], Pb(Zr 1−x ,Ti x )O 3 [24,25], and BiFeO 3 [26][27][28].…”

Phase-field modeling of domain evolution in ferroelectric materials in the presence of defects

“…represents the thermodynamic driving force. Under the assumption that: It is worth stressing that equation (16), which has been introduced here in the usual heuristic manner, can be justified more rigorously from the point of view of thermodynamics as proposed by Gurtin [66] and Su and Landis [37]. Their approaches postulate the existence of internal microstresses x and internal microforces p accounting for the movement of atoms within the lattice and respecting the equilibrium condition…”

“…The capability to orient the electrical polarization, randomly distributed in these materials, into a desired direction is known as poling process. Poling is fundamental in turning inert ceramics [13,14] and thin-film materials [15,16] into electromechanically active materials. Therefore it is of paramount importance, in design and optimization of piezoelectric devices for industrial applications [17], to be able to characterize the coercive field strength, i.e.…”