Vanadium dioxide
(VO2) is a popular candidate for electronic
and optical switching applications due to its well-known semiconductor–metal
transition. Its study is notoriously challenging due to the interplay
of long- and short-range elastic distortions, as well as the symmetry
change and the electronic structure changes. The inherent coupling
of lattice and electronic degrees of freedom opens the avenue toward
mechanical actuation of single domains. In this work, we show that
we can manipulate and monitor the reversible semiconductor-to-metal
transition of VO2 while applying a controlled amount of
mechanical pressure by a nanosized metallic probe using an atomic
force microscope. At a critical pressure, we can reversibly actuate
the phase transition with a large modulation of the conductivity.
Direct tunneling through the VO2–metal contact is
observed as the main charge carrier injection mechanism before and
after the phase transition of VO2. The tunneling barrier
is formed by a very thin but persistently insulating surface layer
of the VO2. The necessary pressure to induce the transition
decreases with temperature. In addition, we measured the phase coexistence
line in a hitherto unexplored regime. Our study provides valuable
information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts,
which can help in the future design of oxide electronics.