Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

Chung, Ying Chien; Cheng, Chao-Ching; Kang, Bo-Kai; Chueh, Wei-Chen; Wang, Shih-Yun; Chou, Chun Liang; Hung, Terry Y.T.; Wang, Shin-Yuan; Chang, Wen‐Hao; Li, Lain‐Jong; Chien, Chao–Hsin

doi:10.1109/iedm13553.2020.9372072

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…With this approach, we successfully demonstrated a multifunctional logic gate based on the vertically hybrid dual-gated J-MISFET for more practical logic operation without concerns about active channel thickness, 41,45,65 gate structure, 58 and additional input sources. 41,64 To advance into a more sophisticated multifunctional device application study, the photoresponse characteristics of the J-MISFET were investigated for 520 nm wavelength green light, where the optical power intensity (P) was 9.8 mW/cm 2 , as In contrast, small photo sensitivities were observed at the channel ON state condition (V G > 0 V), where the I G was negligible compared to the I D,ON under dark and green light conditions. As a result, the photo responses could be primarily regarded as occurring from the MoS 2 active channel.…”

Section: Resultsmentioning

confidence: 99%

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

Yu,

Lee,

Kim

et al. 2024

ACS Nano

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High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors and ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching device consisting of the vertically stacked junction and metal−insulator−semiconductor (MIS) gate structure, named J-MISFET. It shows excellent device performances of low operating voltage (<0.5 V), drain current ON/OFF ratio (∼4.7 × 10 5 ), negligible hysteresis window (<0.5 mV), and near-ideal subthreshold slope (SS) (60 mV/dec), making it suitable for low-power switching operation. Furthermore, we investigated the switchable NAND/NOR logic gate operations and the photoresponse characteristics of the J-MISFET under the small supply voltage (0.5 V). To advance the applications further, we successfully demonstrated an integrated optoelectronic security logic system comprising 2-electric inputs (for encrypted data) and 1-photonic input signal (for password key) as a hardware security device for data protection. Thus, we believe that our J-MISFET, with its heterogeneous hybrid gate structures, will illuminate the path toward future device configurations for next-generation lowpower electronics and multifunctional security logic systems in a data-driven society.

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Section: Resultsmentioning

confidence: 99%

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

Yu,

Lee,

Kim

et al. 2024

ACS Nano

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“…In contrast, the fixed state “0” of the V RG1 and V RG2 enables both MoTe 2 SG-FETs to be PP channels only with ( V in1 = V in2 = −5 V), and its circuit operation is regarded as OR logic gate, indicated in the blue dashed box (see more details in Figure S10). In a similar way to gate control, AND and NOR gate logics would be very possible (by changing the set direction of supplied voltage ( V DD )). Beyond the simple gate logic operations to make the MoTe 2 SG-FET unipolar, we can come up with further interesting combinations by changing the electrode connection between two SG-FETs.…”

Section: Results and Discussionmentioning

confidence: 99%

Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe₂ Transistors

Lee,

Yu,

Lim

et al. 2024

ACS Appl. Electron. Mater.

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Nanogap engineering is developed for nanogapinduced field-effect transistors (FETs) and reconfigurable logic gates with ultrathin ambipolar 2H-MoTe 2 channels. Via nanowire scissor technique, ∼50 nm nanogap channel FET and nanogapdriven spilt-gate (SG) FET are achieved at ease. Our 50 nm channel might be long for 4 nm-thin channel MoTe 2 , so that the short channel effect may be exempted; theoretical calculation results in a characteristic channel length λ of only 14 nm. However, it seems not long enough for a 12 nm-thick channel FET, which reveals visible short channel effects along with an increased λ (∼25 nm). It means that λ is not a strict standard, and much longer channel is necessary to practically prevent short channel effects. By the same nanogap technique, SG electrodes on a dielectric are fabricated to control the polarity of two separated channel locations. Reconfigurable functions are secured; NAND, OR, XOR, and SAND are nicely demonstrated by connecting two SG devices in series. These logic circuits are achieved with no change of device architecture but by properly arranging the connections and bias probing. Our nanogap device engineering is regarded as recommendable, showing its own benefits toward multifunctional devices, fabrication simplicity, and device architecture for the short channel study.

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“…In detail, 2D materials such as graphene or transition metal dichalcogenides (TMDCs), e.g., molybdenum disulphide (MoS 2 ), hafnium disulphide (HfS 2 ), and tungsten diselenide (WSe 2 ), have gained increasing interest as transistor channel materials in digital applications thanks to their atomic scale thicknesses and suitable bandgaps, which are highly desirable properties for low-power FETs that can be utilised in back-end-of-line non-volatile memory and logic applications to augment conventional silicon technology in the future sub-5 nm tech nodes [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas

et al. 2022

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One-dimensional (1D) and two-dimensional (2D) materials represent the emerging technologies for transistor electronics in view of their attractive electrical (high power gain, high cut-off frequency, low power dissipation) and mechanical properties. This work investigates the integration of carbon-nanotube-based field-effect transistors (CNT-FETs) and molybdenum disulphide (MoS2)-based FETs with standard CMOS technology for designing a simple analog system integrating a power switching circuit for the supply management of a 10 GHz transmitting/receiving (T/R) module that embeds a low-noise amplifier (LNA) and a high-power amplifier (HPA), both of which loaded by nanocrystalline graphene (NCG)-based patch antennas. Verilog-A models, tuned to the technology that will be used to manufacture the FETs, were implemented to perform electrical simulations of the MoS2 and CNT devices using a commercial integrated circuit software simulator. The obtained simulation results prove the potential of hybrid CNT-MoS2-FET circuits as building blocks for next-generation integrated circuits for radio frequency (RF) applications, such as radars or IoT systems.

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Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

Cited by 5 publications

References 4 publications

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe₂ Transistors

Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas

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Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET

Cited by 5 publications

References 4 publications

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe2 Transistors

Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas

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Product

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Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe₂ Transistors