Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures

Abstract

We studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi 0.9 Sm 0.1 )(Fe 0.97 Hf 0.03 )O 3 /LaNiO 3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (J SC ) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows J SC ~32 µA/cm 2 and V OC ~0.04 V, which increase to maximum value of J SC ~ 303 (˗206) µA/cm 2 and V OC ~ ˗0.32 (0.26) V after upward (downward) poling at ±8 V. We believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.

Bismuth ferrite materials for solar cells: Current status and prospects

“…Copyright 2014 American Institute of Physics. ITO/Sr-doped BFO 125 405 0.004 [64] ceramics/Au ITO/Sm-doped BFO 1 405 0.37 [65] ITO/BFO thin films/Pt 14.2 220 405 [67] Au/BFO thin films/Pt 0.47 3.82 165 [68] Pt/BFO thin films/Pt 404 0.011 [70] Au/BFO thin films/Pt 1.3 sunlight 0.242 [28] Au/BLFO thin films/LSMO 0.64 green light [76] Au/BKFO thin films/FTO 0.45 1.32 sunlight [79] ZnO:Al/BLFTZO thin 0.022 650 [80] films/Pt Pt/BLFTO thin films/ZnO:Al 0.5 1350 [81] Pt/BSFHO thin films/LNO 0.32 303 100 sunlight [82] Au/BCFMO thin films/ITO 0.25 36 160 405 [83] Au/BFO thin films/BaTiO3/Pt 1.43 12650 [86] ZnO:Al/Bi5FeTi3O15 thin 0.14 16 [73] m-TiO2/BFO thin films/NiO 0.67 510 100 0.19 [87] ITO/ZnO/BFO thin films/Pt 340 0.33 [10] ITO/NiO/Bi2FeCrO6 thin 0.53 8000 2 [88] ITO/Bi2FeCrO6 multilayer thin 0.84 20600 8.1 [89] Ag/Pr-doped BFO NTs/Ag 0.21 10 white-light 0.5 [95]…”

Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3‐Based Heterostructures

“…formed at the side with negative polarization bound charges, the top surface of BFO can be modulated into oxygen-rich or oxygen-poor states with different directions of spontaneous polarization fields. [36,38,39] The amount of oxygen vacancies at the surface of BFO in S-BFO hetero should be larger than that in BFO hetero. [40][41][42] High-resolution transmission electron microscopy (HRTEM) presents the interface in BFO hetero, as shown in Figure 2c.…”

Studies on structural, optical, magnetic, and resistive switching properties of doped BiFe1-xCrxO3 thin films

“…Nevertheless, the severe leakage current in BFO thin film, mainly due to the oxygen vacancies, created during the film growth process, greatly destroy its ferroelectric property. [8][9][10][11][12][13][14][15][16][17] From defect chemistry viewpoint, neutralization/ionization of oxygen vacancies may induce mixed valance states of Fe 3þ and Fe 2þ which in turn leads tunability of leakage current in BFO films. 18 Numerous attempts have been made to suppress the leakage current in BFO films, including site-engineering using substitution/doping of some elements at the Bi and/or Fesites.…”

“…18 Numerous attempts have been made to suppress the leakage current in BFO films, including site-engineering using substitution/doping of some elements at the Bi and/or Fesites. [10][11][12] Appropriate doping at Fe-site not only improves electrical and magnetic properties, but also gives the additional functionality as resistive switching (RS) effect in BFO thin films due to doping driven competition between energetically insulating and conducting ground states. 18,19 Variety of aliovalent transition metals have been doped at Fe-site, such as Ti, Nb, Hf, Ta, Mn, and so on, which are found to be advantageous towards improving magnetic and ferroelectric properties of doped-BFO thin films by means of complex exchange interactions between neighboring transition metal ions and elimination of charge defects, respectively.…”

“…18,19 Variety of aliovalent transition metals have been doped at Fe-site, such as Ti, Nb, Hf, Ta, Mn, and so on, which are found to be advantageous towards improving magnetic and ferroelectric properties of doped-BFO thin films by means of complex exchange interactions between neighboring transition metal ions and elimination of charge defects, respectively. [10][11][12]18,20 However, there are few studies available in the literature related to the effect of multivalent transition metal ion doping on physical properties and charge transport in BFO thin films. 18,21 In this paper, we report the effect of Cr-doping on lattice, spin ordering, and electrical transport properties of BiFe 1-x Cr x O 3 (BFCO) (x ¼ 0, 0.05, 0.1, and 0.15) thin films grown by pulsed laser deposition.…”