Switching Characteristics of a Locally-Active Memristor with Binary Memories

Ying, Jiajie; Wang, Guangyi; Dong, Yujiao; Yu, Simin

doi:10.1142/s0218127419300301

Cited by 23 publications

(8 citation statements)

References 28 publications

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“…Motivated by the multiple stable states of non-volatile memristor, Ying and Wang analyzed the state switching mechanism using pulse excitation in order to verify the non-volatility. With the excitation of pulse voltage, the non-volatile memductance can be switched from one stable state to another state [15]. Some published papers have pointed out the non-volatile locally active memristors can be utilized to describe electromagnetic induction or as a memristive synapse.…”

Section: Introductionmentioning

confidence: 99%

A new locally active memristive synapse-coupled neuron model

Wang

Dong

2021

Nonlinear Dyn

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In this paper, a new type of non-volatile locally active memristor with bi-stability is proposed by injecting appropriate voltage pulses to realize a switching mechanism between two stable states. It is found that the memristive parameters of the new memristor can affect the local activity, which has been rarely reported, and this phenomenon is explained based on mathematical analyses and numerical simulations. Then, a locally active memristive coupled neuron model is constructed using the proposed memristor as a connecting synapse. The parameter-associated dynamical behaviors are revealed by bifurcation plots, phase plane portraits and dynamical evolution maps. Moreover, the bi-stability phenomenon of the new coupled neuron model is disclosed by local attraction basins, and the periodic burster and multi-scroll chaotic burster are found if a multi-level pulse current is used to imitate a periodical external stimulus on the neurons. The Hamiltonian energy function is calculated and analyzed with or without external excitation. Finally, the neuronal circuit is designed and implemented, which can mimic electrical activity of the neurons and is useful for physical applications. The experimental results captured from the

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Section: Introductionmentioning

confidence: 99%

A new locally active memristive synapse-coupled neuron model

Wang

Dong

2021

Nonlinear Dyn

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“…A number of important applications would benefit from the design and implementation of a locally-active memristor, which is defined to be any memristor that exhibits negative https://www.indjst.org/ differential memristance or memductance for at least a current or a voltage applied to the memristor (1) . This is one of the drives of this research work, to realize a locally active memristor that has a wide locally active region characteristics and for some parameter values or frequencies of excitation is entirely active.…”

Section: Introductionmentioning

confidence: 99%

FPGA Implementation of a Novel Two-internal-State Memristor and its Two Component Chaotic Circuit

Alombah¹,

Tchendjeu²,

Kengne³

et al. 2021

IJST

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Objectives: To propose a second-order locally-active memristor, a twocomponent chaotic circuit resulting from this current-controlled generic memristor and an application in steganography. Methods/statistical analysis: Using a one-state-variable first-order memristor, a model is proposed which is obtained by modifying a locally-active memristor based on a current-controlled generic memristor. The model has two internal state variables: a voltage stored up in a capacitor and a current stored up in an inductor. With an external inductor, 3D-two-component chaotic circuit is developed. Numerical studies are made using MATLAB and confirmed by a field programmable gate array (FPGA) based hardware implementation. Findings: A two-state-variable based second-order memristor model is presented. The novel memristor configuration leads to the design of a simple two-component chaotic circuit. By investigating the characteristics of the memristor, it is shown that the memristor can be switched from a predominantly passive region to an active region with a wide locally-active region. An application in steganography helps to hide a secrete message inside an image. Application/improvements: The results obtained in this investigation will enrich the literature of memristive circuits, enhance the simplification of chaotic circuits and can be used to improve the memristive circuit based applications in many research domains such as secure information in telecommunications, Random Number Generation (RNG) and image encryption.

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“…By replacing Chua's diodes with memristors, several nonlinear oscillators are derived in [15], where the memristor is an active device and can be equivalent to a passive memristor connected with a negative resistance (or a negative conductance). More active memristors with different mathematical models are applied in the oscillators and more complex dynamics are observed [16]- [18]. A current-controlled active memristor along with a capacitor and an inductor is used to construct a simplest chaotic oscillating system [16].…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, a voltage-controlled active memristor connected with a capacitor and an inductor forms a chaotic system [17]. In [18], a locally-active memristor model was presented for exploring the nonvolatile and switching mechanism of the memristor and the influence of local activity on the complexity of nonlinear circuits. With respect to the above active memristors [16]- [18], their memristances or memductances are negative with respect to the origin, and the voltage-current characteristic has a branch which crosses the origin into the second and the fourth quadrants.…”

Section: Introductionmentioning

confidence: 99%

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Modeling Simplification and Dynamic Behavior of N-Shaped Locally-Active Memristor Based Oscillator

Liang

Wang

et al. 2020

IEEE Access

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This paper designs a simple mathematical model for the voltage-controlled locally-active memristor (LAM), which undoubtedly simplifies the theoretical analysis. Owing to the N-shaped outline of the DC V-I curve, this LAM is called as N-shaped LAM. The small-signal analysis method is exploited to obtain the equivalent circuit of the N-shaped LAM when it is biased into the locally-active region. The calculation results show that the LAM can be equivalent to a conductance with a parasitic capacitor, which makes for a deep insight into the mechanisms at the origin of LAM based oscillator. The theoretical analysis reveals that the N-shaped LAM along with an inductor and a battery can generate oscillation, which is confirmed by the numerical simulation. In addition, observe from simulation results that as the inductance increases, the oscillation behavior of the system deviates from the sinusoidal signal and tends to a relaxation oscillation. Finally, the physical circuit realization of the N-shaped LAM based oscillator including the memristor emulator is proposed. The good agreement between the experimental results and simulation results further demonstrates the correctness and feasibility of the theoretical design and analysis.

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Switching Characteristics of a Locally-Active Memristor with Binary Memories

Cited by 23 publications

References 28 publications

A new locally active memristive synapse-coupled neuron model

A new locally active memristive synapse-coupled neuron model

FPGA Implementation of a Novel Two-internal-State Memristor and its Two Component Chaotic Circuit

Modeling Simplification and Dynamic Behavior of N-Shaped Locally-Active Memristor Based Oscillator

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