Switching characteristics of an optically controlled GaAs-MESFET

Chakrabarti, P.; Shrestha, Santosh; Srivastava, Arpita; Saxena, Dhruv

doi:10.1109/22.277428

Cited by 33 publications

(19 citation statements)

References 10 publications

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“…A number of theoretical and experimental works have been reported on optically controlled MESFETs [3][4][5][6]. The potential of MESFETs as high-speed photodetectors was first demonstrated by Baack et al [7].…”

Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Chattopadhyay¹,

Overton²,

Vetter³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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“…The drain-source resistance is defined as the inverse of drain to source conductance which is calculated by differentiating the equation of I ds with respect to V ds for constant gate voltage [13]. …”

Section: Drain To Source Resistancementioning

confidence: 99%

Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Islam

Akanda

Anwar

et al. 2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half of change in the junction depth is added to the implant range parameter (before annealing). Straggle parameter is changed by diffusion coefficient and annealing time. Temperature dependency of mobility is also considered in all parameters. The variation of transconductance taking the drain to source voltage as a parameter has also been analyzed. Our analysis provides in-depth knowledge about the operation and characteristics of the high-power SiC MESFETs.

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“…On the other hand, research on optical modulation and control of other conventional electrical devices like MOSFET [11,12], MESFET [13][14][15], or HEMT [16] have primarily concentrated on microwave systems, low-power signal detection, and optical communication applications which have different requirements from power semiconductor devices and associated power electronics applications. The common feature of these works is that optical signal was applied to modulate steady-state properties such as I-V characteristic [11,12,14], RC time constant [15], RF s-parameters [13], or pinch-off voltage [16] which are very important from the corresponding application area point of view but do not cover the direct modulation aspects of switching properties like rise and fall time, which are important in power electronics applications. Moreover, modulations are reported mainly with respect to the power of the optical signal and not on optical wavelength.…”

Section: Investigation Of the Effect Of Optical Intensity Modulationmentioning

confidence: 99%

Optically-gated Non-latched High Gain Power Device

Mazumder¹

2008

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Switching characteristics of an optically controlled GaAs-MESFET

Cited by 33 publications

References 10 publications

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator

Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Optically-gated Non-latched High Gain Power Device

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