Switching characteristics of microplasmas in a planar electrode gap

Rahaman, Habibur; Lee, Byungjoon; Petzenhauser, I.; Frank, K.; Urban, J.; Stark, R.H.

doi:10.1063/1.2718490

Cited by 19 publications

(8 citation statements)

References 6 publications

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“…Micro-plasma devices (MPD) [3][4][5][6][7][8][9][10] have been widely used in the fields of displays [6], medical [7], tip-based nano-manufacturing [8][9][10], materials processing [6,[8][9][10] and others. We fabricated and characterized 2-dimensional (coplanar) MPDs, previously.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of 3D micro-plasma field effect transistors

Chowdhury

Zhang

Tabib-Azar

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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We report the design, fabrication and electrical characterization of novel three dimensional Micro-plasma Field Effect Transistor (MOPFET) devices that operate inside atmospheric RF helium plasma. Current versus voltage characterization of MOPFETs are demonstrated in this paper. High transconductance and reliable gate control over I ds can be obtained from coplanar and 3D MOPFETs. COMSOL simulation is used here to demonstrate the operation principles of MOPFETs. For micro-plasma FETs electrons and ions act as charge carriers to conduct current, instead of electrons and holes, as in, traditional semiconductor FETs. Therefore, MOPFETs have advantages over semiconductor FETs in extreme conditions, such as at high temperatures and in high ionizing radiation such as applications in space exploration and in distressed nuclear reactors.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of 3D micro-plasma field effect transistors

Chowdhury

Zhang

Tabib-Azar

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…(2) r no T where n and no are the gas densities at the elevated gas temperature T and the initial virgin gas temperature To, respectively [6,8]. VblTo) is the breakdown voltage of the virgin gas.…”

Section: Theory and Circuitsmentioning

confidence: 99%

“…We have already presented a pulser system based on a microplasma assisted spark gap that is capable of handling high power and accompanied by highly repetitive pulses [6][7][8]. The high power here means a high repetitive rate of the ultrashort pulses which can provide a high power wideband radiation.…”

Section: Introductionmentioning

confidence: 99%

“…We have concentrated on extremely small energy for discharges in two spark gaps or microdischarges in the spark gaps with the objective of faster cooling of the hot decaying plasma in order to reduce the time for the free voltage recovery process i. e. without any external cooling [6][7][8]. The reduced time for the free voltage recovery process is the pre-requisite for the high PRR switching.…”

Section: Introductionmentioning

confidence: 99%

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Behavior of parallel spark gaps in self breakdown mode

Rahaman

Nam

Lee

et al. 2011

2011 IEEE Pulsed Power Conference

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A spark gap is an important component in a pulsed power system due to its fast switching capability. However, the rate of plasma de-ionization and subsequent cooling of the de-ionized plasma between switching pulses restrict the recovery time of the spark gap, thereby reducing its pulse repetition rate. In addition, the breakdown voltage for the spark gap switching in a self breakdown mode is inversely proportional to the repetition rate under continuous operation. The author earlier used microplasma assisted single spark gap at the high repetition rate. This paper will present an extended work by operating two parallel spark gaps in the self breakdown mode to increase the repetition rate up to 1 MHz. The operating parameters of the spark gap are optimized for the repetition rate and the self-breakdown voltage capability.

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“…1,2 Most of the applications that use plasma utilize its optical, thermal, and high current switching properties. In recent years, there has been interest to develop passive 3,4 and active plasma sensors and electronic components. [5][6][7][8][9][10] Programmable antennas, radiation hard electronics, smart flight skins, plasma metamaterial energy management skins are all but a few examples of devices and systems that are being investigated.…”

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confidence: 99%

Plasma interconnects and circuits for logic gates and computer sub-circuits

Pai

Tabib-Azar

2014

Applied Physics Letters

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Logic gates using plasma-linked microplasma devices are demonstrated in this work. The space charge around a microplasma was used to lower the breakdown voltage of nearby device by 20–40 V. This mechanism was used to establish electrical connection between neighboring microplasma devices without the use of metallization traces. The decay lengths of the space charge were in the range of 178–400 μm depending on the type of gas used. He and Ar gases were used at atmospheric pressure to evaluate the effect of gas species on the space charge decay length. Plasmas can be used to connect devices in 3 dimensions, and their decay constant can be adjusted using pressure, boundary conditions, and gaseous species. Using plasma interconnects, universal gates including OR, AND, NOT, and XOR and computer sub-circuits such as 1 bit adders were designed and characterized.

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Switching characteristics of microplasmas in a planar electrode gap

Cited by 19 publications

References 6 publications

Fabrication and characterization of 3D micro-plasma field effect transistors

Fabrication and characterization of 3D micro-plasma field effect transistors

Behavior of parallel spark gaps in self breakdown mode

Plasma interconnects and circuits for logic gates and computer sub-circuits

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