Switching effects in electron-beam-deposited polymer films

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

“…Reversible switching between different resistance states in solid-state materials is an important phenomenon from the point of view of both in fundamentals and applications. The switching effect between high-resistance and low-resistance states was reported in ZnSe-Ge heterostructures, 1) amorphous Si, 2) organic polymers [3][4][5] and then various metal oxides such as Cr-doped SrTiO 3 , 6) TiO 2 , 7) Nb 2 (Ta 2 )O 5 8) and NiO. 9) In most cases, the effect can be driven by moderate voltage and shows nonvolatile behavior, which provides a promising opportunity for application in resistive randomaccess memory (RRAM).…”

Molecular dynamics simulations of oxide memory resistors (memristors)

“…for decades [1][2][3][4][5][6][7][8]. The diverse semiconductor [9][10][11], polymer [12,13], and correlated oxide systems [10,[14][15][16][17] exhibited switching under electric pulsing. In recent years, interest in various oxide-based systems switchable by an electric pulse has grown quite dramatically leading to important breakthroughs and exposing various fundamental problems related to mechanisms of bipolar (driven by alternating positive and negative biasing to close the I-V hysteresis loop) and unipolar (driven by the bias of one polarity) switching behavior [18][19][20].…”

“…Some of these issues are not well understood although the hysteretic behavior of such materials, especially thin films of Transition Metal Oxides (TMO) like Ta 2 O 5 , Nb 2 O 5 , TiO 2 , NiO, Cu 2 O, and Group III and IV oxides (Al 2 O 3 , SiO x ), in metal-insulator-metal (MIM) vertical devices have been studied for decades [1][2][3][4][5][6][7][8]. The diverse semiconductor [9][10][11], polymer [12,13], and correlated oxide systems [10,[14][15][16][17] exhibited switching under electric pulsing. In recent years, interest in various oxide-based systems switchable by an electric pulse has grown quite dramatically leading to important breakthroughs and exposing various fundamental problems related to mechanisms of bipolar (driven by alternating positive and negative biasing to close the I-V hysteresis loop) and unipolar (driven by the bias of one polarity) switching behavior [18][19][20].…”

Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

“…© 2001 American Institute of Physics. ͓DOI: 10.1063/1.1377617͔ Reversible resistive switching processes occurring in thin films of amorphous semiconductors, 1 polymers, [2][3][4] and ZnSe-Ge heterostructures 5 have engendered strong interest in these materials for application in nonvolatile memories. The memory behavior of oxides, based on current-induced bistable resistance effects or voltage-controlled negative resistance phenomena, as observed in compounds such as Nb 2 O 5 , 6 TiO 2 , 7 Ta 2 O 5 , 8 and NiO, 9 has been studied in alloxide thin-film heterostructures involving ferroelectrics 10 and simple metal-insulator-metal ͑MIM͒ structures.…”