Switching Enhancement in Copper Oxide Thin-Film Transistors via Molybdenum Trioxide Buffering and Nitrogen Doping

The lack of low temperature processable, highperformance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO x TFT with unprecedented hole field-effect mobility (μ FE-hole ) of 38.7 cm 2 /V•s, as well as an on/off current ratio (I on/off ) of 2.5 × 10 3 and lower subthreshold swing (SS) of 240.9 mV/dec when compared to reported works on ptype oxide-based TFTs. Material characterization correlated with the SnO x TFTs' electrical behavior elucidated the performance to the structural and compositional phase modulation of the SnO x thin films, modulated by O 2 partial pressure during deposition and post-encapsulation annealing. By integrating the SnO x TFT with an IGZO TFT in both planar and stacked complementary FET-like form, we demonstrated a true oxide-based CMOS inverter, achieving one of the highest voltage gains of 57 and the lowest static power consumption down to 34 pW for both on and off states.

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Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures

Zeng,

Zhukova,

Faniel

et al. 2024

IEEE Trans. Electron Devices

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Switching Enhancement in Copper Oxide Thin-Film Transistors via Molybdenum Trioxide Buffering and Nitrogen Doping

Cited by 3 publications

References 30 publications

Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer

Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer

p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration

Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures

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