Switching phenomena in amorphous thin films of Ge, Cd x Te y and Sb x Se y

Luby, Š.; Červenák, J.; Kubek, J.; Marcin, Miroslav; Schilder, J.

doi:10.1007/bf01725132

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…Luby et al discuss the electronic switching phenomena observed for amorphous samples of Sb x Se y ; the analysis of current−voltage responses display a characteristic switch from high-resistivity to low-resistivity states from Sb x Se y films. 34 The switching is attributed to the generation of a conduction channel through the sample due to electrothermal processes. Anisotropic anomalies arising within layer structures is also a well-known phenomenon discussed extensively for Cd-containing layerstructures by Van der Valk et al 35 Asymmetric coordination of anions with a highly charged cation produces polarization of the anions, for which, in an ideal octahedral complex of a metal ion surrounded by anions, the overlap repulsion and covalent bonding yield isotropic fields.…”

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“…The observed increase in polarization is unsurprising given the two new materials within the active region possess electronically active structures. Luby et al discuss the electronic switching phenomena observed for amorphous samples of Sb x Se y ; the analysis of current–voltage responses display a characteristic switch from high-resistivity to low-resistivity states from Sb x Se y films . The switching is attributed to the generation of a conduction channel through the sample due to electrothermal processes.…”

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Ferroelectric Particles Generated through a Simple, Room-Temperature Treatment of CdSe Quantum Dots

Wrenn¹,

McBride²,

Mares³

et al. 2015

Chem. Mater.

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confidence: 99%

mentioning

confidence: 99%

Ferroelectric Particles Generated through a Simple, Room-Temperature Treatment of CdSe Quantum Dots

Wrenn¹,

McBride²,

Mares³

et al. 2015

Chem. Mater.

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“…More unique uses are reported in refs. [70] and [71]. In the second group of more active devices we find an investigation of thin film triodes by J. Reynaud et al [72] which appears quite interesting and the use of CdTe as a non-linear load impedance in integrated circuits [73].…”

Section: Solar Cells -In 1957 Loferskimentioning

confidence: 99%

Applications of CdTe. A review

Wald¹

1977

Rev. Phys. Appl. (Paris)

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The review considers the history of CdTe in short form and delineates the applications potential for the compound. This potential is seen to arise on the one hand from a combination of various physical properties which is useful for several classes of electronic and particularly optoelectronic devices, and on the other hand from the fact that thin film fabrication and low cost starting materials could give it significant cost advantages over other semiconductors. The obvious lack of widespread application is traced to three fundamental problems : 1) Lack of control over minority carrier behavior ; 2) Erratic and non reproducible performance of thin films ; 3) Lack of good contacts to low resistivity p-type material. Some suggestions on further work in these areas are also advanced

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The amorphous structure of the SbSe system

Sagara

Uemura

Suzuki

et al. 1976

Phys. Stat. Sol. (a)

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Using the electron diffraction technique a radial-distribution study of amorphous evaporated Sb-Se films at various compositionrr-was performed. The interatomic distance linearly increases from 2.34 A for pure Se to 2.84 A for an 85 atyo Sb alloy. The coordination number remarkably increases in the vicinity of Sb,Se,. Compared with the crystalline phase, a decrease in the interatomic distance and an increase in the coordination number are found for amorphous Sb,Se3. I n the alloy composition within the Sb rich region, the shape of the first peak in the radial distribution function is not as symmetrical as for pure Se. This asymmetry is considered to be related with the splitting of the third peak in the interference function.Mit Hilfe der Elektronenbeugungstechnik wurde die Radialverteilung aufgedampfter amorpher Sb-Se-Schichten unterschiedlicher Zusammensetzung untersucht. Der interatomare Abstand steigt linear von 2,34 A fur reines Selen auf 2,84 A fur Sb-Se-Legierungen mit 85 At% Sb an. I n der Niihe von Sb,Se, steigt die Koordinationszahl deutlich. Verglichen mit der kristallinen Phase wird fur aniorphes Sb,Se, ein kleinerer interatomarer Abstand und eine groBere Koordinationszahl gefunden. I m antimonreichen Bereich der Legierungszusammensetzung ist die Form des ersten Maximums der radialen Verteilungsfunktion nicht so symmetrisch wie die fur reines Selen. Es wird angenommen, da13 diese Ssymmetrie mit der Aufspaltung des dritten Maximums der Int,erferenzfunktion zusammenhlingt.

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Switching phenomena in amorphous thin films of Ge, Cd x Te y and Sb x Se y

Cited by 10 publications

References 13 publications

Ferroelectric Particles Generated through a Simple, Room-Temperature Treatment of CdSe Quantum Dots

Ferroelectric Particles Generated through a Simple, Room-Temperature Treatment of CdSe Quantum Dots

Applications of CdTe. A review

The amorphous structure of the SbSe system

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