2017
DOI: 10.1587/elex.14.20170177
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Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor

Abstract: Fast switching capability of SiC power devices enables the downsizing of power conversion circuits by high-frequency switching operation. However, high di/dt in fast switching operation for high-frequency switching induces surge voltage. This paper developed low-inductance power module substrate with snubber capacitor directly attached on the substrate to suppress surge voltage in fast switching, and validated the performance of the developed SiC half-bridge power module. The surge voltage was suppressed less … Show more

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Cited by 5 publications
(1 citation statement)
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“…Besides, Funaki discussed the ringing oscillation caused by parasitic inductance in Si/SiC devices tests [11,12]. The researches of high-speed switching operation and switching surge voltage suppression are studied [13,14].…”
Section: Introductionmentioning
confidence: 99%
“…Besides, Funaki discussed the ringing oscillation caused by parasitic inductance in Si/SiC devices tests [11,12]. The researches of high-speed switching operation and switching surge voltage suppression are studied [13,14].…”
Section: Introductionmentioning
confidence: 99%