Switching Trajectory Control of SiC MOSFET Based on I—V Characteristics Using Digital Active Gate Driver

Takayama, Hajime; Fukunaga, Shuhei; Hikihara, Takashi

doi:10.1109/ecce-asia49820.2021.9479118

Cited by 6 publications

(6 citation statements)

References 21 publications

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“…The analysis on the state space requires the accuracy of the model, especially the I D –

V_{DS}

characteristics. The use of originally‐developed surface‐potential‐based model of SiC MOSFET 24 helps us to develop the control strategy on the state space, which we have already started the investigation 25 . Then, starting from the predicted gate signal sequence, general optimization methods may be applied to further adjust the sequence according to the load condition and device parameter variation.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…The use of originally-developed surface-potential-based model of SiC MOSFET 24 helps us to develop the control strategy on the state space, which we have already started the investigation. 25 Then, starting from the predicted gate signal sequence, general optimization methods may be applied to further adjust the sequence according to the load condition and device parameter variation. The results in this paper provide important clues that will be a basis for developing control strategies and algorithms for generating gate signal sequences to obtain the physically appropriate power switching.…”

Section: In-rated Switching Operation Test Of Sic Mosfetmentioning

confidence: 99%

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Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching

Takayama

Okuda

Hikihara

2021

Circuit Theory & Apps

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In this paper, a digital active gate driver for SiC power MOSFETs is proposed.High-frequency switching with SiC power MOSFETs can realize an integrated power circuit with higher power density. However, the large surge voltage and ringing caused by the fast switching will lose the reliability of the device and increase electromagnetic interference (EMI) problems. To achieve highfrequency switching without these drawbacks, an active gate driver based on the architecture of a digital-to-analog converter has been designed. The gatesource voltage waveform of the MOSFET is generated directly and flexibly by a multibit gate signal sequence, considering the device characteristics and a variety of circuit conditions. Effective gate signal sequences are investigated by focusing on the switching trajectory on the state space of the device, which is discretely controlled through successive transitions between operating points. Experimental and simulated results confirm that the proposed gate driver effectively suppresses and regulates the surge voltage and ringing during turn-off.

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“…The analysis on the state space requires the accuracy of the model, especially the I D –

V_{DS}

Section: Simulation Resultsmentioning

confidence: 99%

Section: In-rated Switching Operation Test Of Sic Mosfetmentioning

confidence: 99%

Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching

Takayama

Okuda

Hikihara

2021

Circuit Theory & Apps

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“… Much better at decreasing oscillation duration than a reduction of maximum voltage  Slightly increased losses [23], [24], [25] [26], [27], [28], [29], [30], [31], [32], [33], [34], [35], [36], [37], [38], [39], [40], [41] RC Snubbers  Adding circuit components to create a critically damped system at the ringing frequency  Simple to implement  cost-effective  passive  High-order can be very effective  Lower order has minimal oscillation suppression  Slightly increased losses  Higher order can be complicated to calculate and design [25], [42], [43], [44], [45], [46], [47], [48], [49], [50] Zero Overvolatge Switching  Increase switching speed and inductance according to the optimisation equation.…”

Section: Ferrite Beadsmentioning

confidence: 99%

Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Toit,

Hofsajer

2024

IEEE Access

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Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node. Existing methods that effectively suppress this overvoltage include slower switching and minimisation of inductance, but unfortunately, these methods become very difficult to implement as the switching speed increases. A new oscillation suppression method, Zero Overvoltage Switching (ZOS), has previously been developed in which the overvoltage is suppressed very effectively by increasing both the switching speed and inductance, contrary to mainstream expectation. This is the only oscillation suppression method that becomes more effective as the switching speed increases and is not constrained by the minimisation of inductance, yet this method has not gained widespread recognition. This is expected because Zero Overvoltage Switching is not explained within the context of existing knowledge, and the argument for implementing it is difficult in the very narrow window where the advantages outweigh the effort. This research develops a generalised fundamental model to better understand Zero Overvoltage Switching by describing the mechanics of fast and slow switching events. The model is also able to provide insights that lead to methods to apply Zero Overvoltage Switching over a broader range of voltages and currents.INDEX TERMS Wide Bandgap(WBG), Ultra Wide Bandgap (UWBG), Zero Overvoltage Switching (ZOS), Oscillation Suppression Methods

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“…Just like them, we can genetically express the gate signal sequence and optimize it. The authors have already investigated the applicability of GA-based optimization into DAGD in simulation [22]. This paper takes this into the form of digital-twin-compatible system by constructing and verifying an optimization platform interfacing both the SPICE simulation and experimental setup.…”

Section: Introductionmentioning

confidence: 99%

Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm

Takayama

Fukunaga

Hikihara

2023

IEEE J. Emerg. Sel. Top. Ind. Electron.

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Active gate drive (AGD) is one of the key techniques to utilize SiC power devices' fast-switching capability without compromising the drawbacks. However, the increasing complexity in the circuit design makes it hard to have an optimized operation without expert know-hows or considerable design efforts. This paper demonstrates a digital-twincompatible metaheuristic optimization system for a digital AGD. It offers a totally-digital control of switching characteristics of power devices through genetic-algorithm-based optimization. An individually developed digital AGD is adopted to generate a genetically expressed gate-voltage waveform by a multi-bit gate signal sequence. The optimization system is verified in simulation and experiment by successfully obtaining the optimum Pareto-front solutions, which clarify the relationship between the selected gate voltage levels and the device characteristics. The optimization is also performed for variable operating conditions and for different SiC MOSFETs. The results of this paper offer feasibility for a software-based optimization of gate drive design.

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Switching Trajectory Control of SiC MOSFET Based on I—V Characteristics Using Digital Active Gate Driver

Cited by 6 publications

References 21 publications

Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching

Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching

Fundamental Modeling of the Switching Transition in High-Speed Power Electronics

Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm

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