We have studied the symmetry properties of the bands of the layered semiconductor GaSe along the ⌬ direction by means of spin-resolved electron spectroscopy using circularly polarized synchrotron radiation and by means of a relativistic LAPW band-structure calculation. The photoelectron spectra show in the main a pair of weakly dispersing peaks caused by direct transitions from valence-band states with symmetries ⌬ 9 5 , ⌬ 9 6 and ⌬ 7 5 , ⌬ 8 6 . Our data determine the spin-orbit splitting of these valence bands to be ⌬E so ϭ0.3Ϯ0.1 eV. We find a gap in the unoccupied bands along ⌬ about 8 eV above the fundamental gap. The analysis of the photoelectron spin polarization reveals that also unoccupied states with low symmetries ⌬ 7 5 , ⌬ 8 6 and ⌬ 9 5 , ⌬ 9 6 are involved in excitation and emission. Spin resolved spectra measured at Auger electrons following the decay of Ga 3d core holes confirm that p derived unoccupied states exists below the vacuum level.