2009
DOI: 10.1016/j.surfcoat.2009.02.137
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Synchronous plasma enhancement in RF-driven plasma source for ion implantation

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Cited by 2 publications
(2 citation statements)
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“…This feature makes the rf discharge suitable for application in different material processing areas. [19][20][21][22][23][24] The experimental parameters varied are operating power (10 W to 120 W) and pressure (10 mTorr to 350 mTorr). The three measured quantities, i.e., I rms , V rms , and average power P are used to calculate the reduction of the bulk plasma resistance as well as the deviation of the I rms from the homogeneous discharge model.…”
Section: Experimental Systemmentioning
confidence: 99%
“…This feature makes the rf discharge suitable for application in different material processing areas. [19][20][21][22][23][24] The experimental parameters varied are operating power (10 W to 120 W) and pressure (10 mTorr to 350 mTorr). The three measured quantities, i.e., I rms , V rms , and average power P are used to calculate the reduction of the bulk plasma resistance as well as the deviation of the I rms from the homogeneous discharge model.…”
Section: Experimental Systemmentioning
confidence: 99%
“…Due to this "self bias" the ion energies near the power electrode reaches up to few hundred eV. This feature makes the rf discharge suitable for application in different material processing areas [2,[15][16][17][18][19]. The experiment is carried out in 35 mtorr chamber pressure and the rf power is varied from 10 watt to 120 watt.…”
Section: Methodsmentioning
confidence: 99%