Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450%. Whereas the TO= have a unique nature, some NLlO defects probably have different structures in differently doped silicon samples. NLlO defects were studied in P-doped silicon with electron paramagnetic resonance (EPR) and Hall effect measurements yielding the result that NLlO is a donor in this n-type silicon with a level deeper than 65 meV below the conduction band minimum. P is, however, not part of the defect.Electron nuclear double resonance (ENOOR) experiments have been performed on NLlO defects in B-and C-doped Si, while they were not possible in P-doped S i because of a short electron spin-lattice relaxation time. No ENOOR lines, except the 'distant' ENOOR lines of I l B , I3C and 29Si respectively, were detected. This is in contrast to what was found previously in AI-doped Si. To explain this it is proposed that neither B nor C may be part of the NLIO defect in 8-and C-doped Si respectively. In "0-diffused B-doped Si a weak and rather broad ENDOR line was found which is not found in ''0-containing Si and which is attributed to "0. In this case oxygen has much smaller quadrupole interactions than those found previously for NLlO centres in AI-doped Si and for TDDS. differently doped Si, for which our investigations have given some evidence.The identical EPR spectra of NL10 centres do not reveal structural differences in