Synchrotron radiation induced reactions of a condensed layer of silicon alkoxide on Si

Abstract

Selective area, synchrotron radiation induced, delta doping of silicon J. Appl. Phys. 71, 4795 (1992); 10.1063/1.350619 Degradation of hydrogenated amorphous silicon films induced by irradiation of synchrotron radiation lightThe authors have investigated the synchrotron radiation ͑SR͒ induced chemical reactions of condensed layers of silicon alkoxides, tetramethoxysilane Si͑OCH 3 ͒ 4 and tetraethoxysilane Si͑OC 2 H 5 ͒ 4 , adsorbed on a Si substrate at 80 K. Photon stimulated desorption measurements show that irradiation with SR in the vacuum-ultraviolet region induces the desorption of hydrogen, hydrocarbon, and carbon monoxide from the condensed layer, indicating that the radiation decomposes the alkoxyl group in the silicon alkoxides. Infrared absorption and photoemission data demonstrate that Si-containing fragments produced by the decomposition of silicon alkoxide molecules are polymerized to form silicon oxide. The experimental results show the possibility of deposition silicon oxide film from silicon alkoxides using intense SR in the VUV region.

Photoinduced synthesis of amorphous SiO2 with tetramethoxysilane

“…Secondly, Niwano et al synthesized a-SiO 2 films from the tetraethoxysilane with the synchrotron radiation whose photon energy ranges from the soft x ray to infrared through the visible region. 8,9 Their work provides a good starting point. The relationship between photon energy for irradiation and the reaction remains an unsettled question.…”