Synchrotron radiation photoemission study of S-passivated GaAs surfaces

Ding, Xinyi; Yuan, Zhu-Shu; Hu, He; Li, Z.S.; Chen, Y.F.; Chen, X.Y.; Cao, Xuanye; Hou, Xiaoyuan; Wang, Xun; E, Lu; Xu, Sheng; Xu, Ping; Zhang, X.Y.

doi:10.1016/s0168-583x(97)00468-0

Cited by 2 publications

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“…A number of sulfur-based processes, including aqueous and gas-phase treatments, have been investigated to enhance the resistance of GaAs to oxidation. Wet chemical treatments including ammonium sulfide ((NH 4 ) 2 S), − sodium sulfide (Na 2 S·9H 2 O), − thionyl chloride (SO 2 Cl 2 ), − thioacetamide (CH 3 CSNH 2 ), − and organothiols − have all been shown to generate passivating layers on GaAs surfaces with varying degrees of success. Among these compounds, (NH 4 ) 2 S has been shown to be the most effective; however, even samples treated by this method have shown degradation upon exposure to the atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Surface Reactions of 1-Propanethiol on GaAs(100)

et al. 2005

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The adsorption and decomposition pathways of 1-propanethiol on a Ga-rich GaAs(100) surface have been investigated using the techniques of temperature programmed desorption, X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). 1-Propanethiol adsorbs dissociatively on a clean GaAs(100) surface to form propanethiolate and hydrogen. Further reactions of these species to form new products compete with the recombinative desorption of molecular propanethiol. The C-S bond scission in the propanethiolate results in the formation of propyl species and elemental sulfur. The generation of propene via beta-hydride elimination then follows. In addition, propane and hydrogen form via reductive elimination processes. A recombinative high-temperature propanethiol desorption state is also observed. XPS and TOF-SIMS analyses confirm the presence of sulfur on the GaAs(100) surface following thermal decomposition. This paper discusses the mechanisms by which these products form on the GaAs(100) surface.

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