Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy

InAs-mediated growth of vertical InSb nanowires on Si substrates

“…It can be observed that the indium droplet shows poly-crystalline structures (metal) (see Figure 3b), while the NW body just below the indium droplet present zinc blende structure (InSb semiconductor) (see Figure 3c), which is consistent with previous results reported [15-17] for Au or Ag-catalyzed InSb NWs. The SAED pattern from area 3 (Figure 3d) shows two sets of diffraction patterns [18], and both of them are [1-10] zone axis diffraction patterns. One pattern indexed by 1 presents a relative 70.5° rotation with respect to the other pattern indexed by 2.…”

“…Indium antimonide (InSb), a kind of III-V semiconductor with a narrow bandgap (0.17 eV), a large bulk electron mobility (≈7.7×10 4 cm 2 /V/s) [1], and a high thermoelectric figure of merit (0.6) [2], has been an attractive material for various applications such as high-speed and low-power electronics, infrared optoelectronics, quantum-transport studies, and thermoelectric power generation [3-5]. The heteroepitaxial growth of InSb films on Si surface has attracted much attention due to the potential of integrating InSb devices on Si substrate.…”

Self-catalyzed growth of InP/InSb axial nanowire heterostructures

“…InSb is a compound semiconductor with a high electron mobility ($ 7.7 Â 10 4 cm 2 V À 1 s À 1 ), the lowest band gap (0.17 eV) [1], and the highest thermoelectric figure of merit (ZT $ 0.06) among all the group III-V compounds [2,3], and is attractive for applications in high-speed low-power electronics, optoelectronics, spintronics, and thermoelectrics [4]. Further improvement in properties and/or realization of new functionalities can be achieved via the creation of low-dimensional structures such as one-dimensional (1D) nanowires and nanowire heterostructures [5] with compositionally and structurally abrupt interfaces [6,7].…”

Field effect transistor based on single crystalline InSb nanowire

“…3 Among the III-V group, indium antimonide (InSb) has the smallest band gap energy (170 meV) at room temperature and possess an extremely high bulk electron mobility. 2,4,5 It has been widely used in infrared optoelectronics and high-speed devices, and has inspired significant interest for fundamental studies in their nanostructure form for potential application as high speed nanoelectronic devices.…”