Synergistic photoluminescent interaction of Si and CdTe quantum dots

Chemically processed CdTe thin films for potential applications in solar cells – Effect of Cu doping

“…It is noticed that films with 6 wt% Cu concentration exhibited a higher peak intensity at 567 nm. This observation can be attributed to the improved crystalline quality and reduced presence of crystallographic defects [ 68 , [63] , [64] , [70] ], as previously mentioned in the XRD analysis. Additionally, films doped with 6 wt% Cu showed reduced lattice variations as indicated by a higher PL peak intensity.…”

“…These variations can be easily correlated with the traps and extra energy levels due to the lattice mismatch and structural defects, as shown in section 3.1 . The CdTe sample of lower quality exhibits defect bands at 757 nm and 778 nm that possesses the size-dependent energy level shift induced by the changing of quantum confinement effect [ [62] , [63] , [64] , [65] ]. This provides evidence that the deep center defect band can be utilized to monitor the surface quality of the substrate and is associated with native defects that are connected to growth and processing, such as interstitials and vacancies.…”

“…This provides evidence that the deep center defect band can be utilized to monitor the surface quality of the substrate and is associated with native defects that are connected to growth and processing, such as interstitials and vacancies. Multiple transitions may be present, according to the shape of the wide 500 nm-800 nm region [ [63] , [64] , [66] ]. The shoulder peaks of samples S1 and S2 at 468 nm and 479 nm occurs as a consequence of the recombination of excited electrons that become trapped at shallow levels, thereby producing bound electron–hole pairs [ [62] , [64] ].…”