Synthese und Struktur eines ultradünnen Alumosilicatfilms

Stacchiola, Darı́o; Kaya, Sarp; Weissenrieder, Jonas; Kuhlenbeck, Helmut; Shaikhutdinov, Shamil K.; Freund, Hans‐Joachim; Sierka, Marek; Todorova, Tanya K.; Sauer, Joachim

doi:10.1002/ange.200602670

Cited by 9 publications

(8 citation statements)

References 24 publications

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“…Modeling such materials under controlled conditions, and taking advantage of the analytical tools commonly used in surface science, would provide a new playground for exploring structures and chemical reactions on zeolites. The preparation of well‐defined aluminosilicate thin films was first reported using a Mo(112) substrate 2. It was shown that this film consists of a single layer network of corner‐sharing [SiO 4/2 ] tetrahedra and [AlO 3/2 ] units, and the film is strongly bound to the Mo(112) surface by Si‐O‐Mo linkages (Figure 1 a).…”

Section: Dft (Pbe+d) Results For Angles [°] Bond Distances [Pm] Andmentioning

confidence: 99%

Modeling Zeolites with Metal‐Supported Two‐Dimensional Aluminosilicate Films

et al. 2012

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Flat pore models: Thin, well-defined aluminosilicate films with tetrahedral [SiO_4/2] and [AlO_4/2⁻] building blocks that are weakly bound to an underlying metal support contain highly acidic bridging OH species, which exhibit H–D exchange (see picture; Si yellow, O red, Al gray, C black, H white). These films are a model system for surface-science studies of the inner walls of zeolite pores

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Section: Dft (Pbe+d) Results For Angles [°] Bond Distances [Pm] Andmentioning

confidence: 99%

Modeling Zeolites with Metal‐Supported Two‐Dimensional Aluminosilicate Films

et al. 2012

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“…Recently, 2D counterparts for 3D porous materials have been developed . One system, already mentioned, is SiO 2 /Mo(112) .…”

Section: Thin Film Functionalization Via Selective Dopingmentioning

confidence: 99%

Two‐Dimensional Oxides and Their Role in Electron Transfer Mechanisms with Adsorbed Species

Pacchioni

2014

The Chemical Record

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Insulating or semiconducting oxides prepared in the form of ultrathin films grown on a metal may exhibit phenomena and behaviors that make them quite interesting for their potential applications in catalysis and other fields. In this review we consider in particular what is probably the most relevant one of these phenomena, i.e., the possibility to decouple the wave functions of the metal support and the adsorbed species by means of the thin separating dielectric layer, and consequently to induce charge transfer in one or the other direction, producing collections of positively or negatively charged adsorbates. We describe the basic results that opened up this relatively new field and discuss formation of negatively and positively charged atomic adsorbates and the mechanisms at the basis of the electron flow through the thin dielectric layer. We illustrate some direct consequences of the charge transfer on two-dimensional oxide layers, like the possibility to change the shape of supported clusters, or to dissociate chemical bonds with mechanisms that are different from the respective bulk oxides. We also discuss how the properties of ultrathin films, and in particular the work function of the system, can be modified by selective interstitial or substitutional doping.

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“…As pore diameters in zeolites and silicates are adjustable between 5-100 Å, size-selective adsorption and reaction schemes can be realized. 4,5 The system consists of an ultra-thin silicon-dioxide film that is prepared on a Mo(112) surface. 6,7,8 The fundamental building blocks of the oxide layer are six-membered -Si-O-rings, enclosing a hole of 3-4 Å diameter.…”

Section: Introductionmentioning

confidence: 99%

Realization of an atomic sieve: Silica on Mo(112)

et al. 2009

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The adsorption of Pd, Ag and Au atoms on a porous silica film on Mo(112) is investigated by scanning tunneling microscopy and density functional theory. While Pd atoms are able to penetrate the holes in the silica top-layer with virtually no barrier, Ag atoms experience an intermediate barrier value and Au atoms are completely unable to pass the oxide surface. The penetration probability does not correlate with the effective atom size, but depends on their electronic structure. Whereas Pd with an unoccupied valence s-orbital has a low penetration barrier, Ag and Au atoms with occupied s-states experience a substantial repulsion with the filled oxide states, leading to a higher barrier for penetration. In the case of Ag, the barrier height can be temporally lowered by promoting the Ag 5s-electron into the support. The Mo-supported silica film can thus be considered as a primitive form of an atomic sieve whose selectivity is controlled by the electronic structure of the adatoms.

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Synthese und Struktur eines ultradünnen Alumosilicatfilms

Abstract: Abbildung 2. Aufsichten und Perspektivansichten des {AlO 4 }-und des {AlO 3 }-Modells für Alumosilicatfilme auf Mo(112).Abbildung 3. O1s-Region der PE-Spektren des Siliciumoxid-und des Alumosilicatfilms (Al/Si % 1:5) bei normaler und flacher Emission. Angewandte Chemie 7799

Cited by 9 publications

References 24 publications

Modeling Zeolites with Metal‐Supported Two‐Dimensional Aluminosilicate Films

Modeling Zeolites with Metal‐Supported Two‐Dimensional Aluminosilicate Films

Two‐Dimensional Oxides and Their Role in Electron Transfer Mechanisms with Adsorbed Species

Realization of an atomic sieve: Silica on Mo(112)

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