By co‐decomposition of a vapor mixture of tetraethylorthosilicate (TEOS) and tetraethyl lead (TEL), homogeneous lead silicate films with various
normalPbO
content were formed on silicon substrates in a vertical barrel reactor in the temperature range of 300°–450°C. The films are amorphous, exhibit good dielectric properties, and become totally hydrophobic when their
normalPbO
content exceeds, depending on the film's growth temperature, 11–15 m/o. By virtue of their hydrophobicity and good thermal compatibility with Si, lead silicate films are potential materials for microelectronic passivation, encapsulation, and interlayer insulation.