Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase

Influence of the substrate on structure and magnetic properties of Co–N thin films

“…Cobalt and iron nitrides ferromagnetic phases share similar structures for equivalent stoichiometry. Fe 3 N 1+y and Co 3 N 1+y ϵ-phases are hexagonal and can accommodate different content in nitrogen, while Fe 4 N and Co 4 N γ-phases are cubic with the nitrogen occupying the center of the cubic cell and cobalt or iron located at the vertices and center of the faces [3,[8][9][10]. In the ferromagnetic phases the moment per iron or cobalt decreases with the increase of the nitrogen content [11], the cubic phases displaying the highest magnetizations.…”

“…Theoretical calculations indicate that Co 4 N has high spin polarization ratio 0.88 [16], and is suitable for integration in spintronic devices. Magnetic cobalt nitrides thin films have been produced, generally using sputtering techniques [2,3,9,[13][14][15][17][18][19][20], with compositions directly related with the partial pressure (PP) of N 2 in the Ar+N 2 atmosphere used during deposition. Although a relatively large literature exists concerning the preparation, structural and magnetic characterization of Co-N films, systematic studies aimed to study the influence of the substrate on the film orientation and magnetic behavior are still lacking.…”

Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy

“…Co 4 N has a cubic perovskite lattice structure, where one N atom is located at the body-center of fcc-Co, and the lattice constant is reported to be 0.3738 nm [4]. There have been only a limited number of reports on the growth of cobalt nitride (Co-N) films by sputtering [5][6][7]. Very recently, Imai et al calculated that the P value of the density of states (D) for up and down spins at the Fermi level, described by (D m À D k )/(D m þD k ), reaches approximately À 0.88, and this value is larger than that of Fe 4 N (À0.67) [8].…”

Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

“…A fcc Co 4 N phase has been reported by other groups 26,27 using sputtering. This is the first report of Co 4 N material with the fcc phase prepared using CVD.…”